Design and performance of two-phase charge-coupled devices with overlapping polysilicon and aluminum gates

Optimum operating conditions for an aluminium-gate CCD shift register

“…There is no doubt that the efficiency will decrease in this region because it is well known that the performance of MOS type devices falls off above 10 MHz. Other authors (Patrin 1973, Tomsett 1972, Kosonocky and Carnes 1973 have also observed the fall-off at high frequencies in the region of 1-10 MHz.…”

“…Whether this versatility will be realized depends to some extent on a more complete understanding of the theoretical and experimental operation of the device. Although there have been a relatively large number of papers on the theory of the CCD (Strain and Schryer 1971, Amelio 1972, Mohsen et a1 1973 and on the various technologies of fabrication (Berglund et a1 1972, Tompsett 1972, Collins et a1 1973, Kosonocky 1973, a simple description of the experimental operating conditions required to attain optimum performance from devices has not been given.…”

Technological Evolution of Image Sensing Designed by Nanostructured Materials

“…Floating diffusion charge detection is the most commonly used charge detection scheme. In a CCD image sensor, the charge detection can be achieved by a floating diffusion arrangement established at the terminal of the horizontal CCD register, whereas it is accomplished within a pixel for CIS active-pixel sensors (APSs) . The pixel readout circuit converts charge to voltage, after that, the signal accumulates within the pixel.…”

“…In a CCD image sensor, the charge detection can be achieved by a floating diffusion arrangement established at the terminal of the horizontal CCD register, whereas it is accomplished within a pixel for CIS active-pixel sensors (APSs). 61 The pixel readout circuit converts charge to voltage, after that, the signal accumulates within the pixel. In the display mode, the accumulated signal within the pixel is displayed on the programming gain amplifier (PGA) by the selection of a suitable pixel utilizing the column and row registers.…”

Low-Loss Charge-Coupled Device.

“…Another charge transfer also involving first-order trapping loss that requires special attention is the transfer at time t' 1 which separates the trailing bias charge T 1 and the signal charge S 1. This transfer is referred to as an incomplete (or bucket-brigade type) charge transfer (2,7], To assure higher charge-transfer efficiency at this point, the transfer gate powered by • BCT and generating the barrier potential was designed longer (10 . un long) as shown in *The modified double •gc is not included in the tester described in Appendix A. a small , fixed amount of charge ~~ is left behind in the potential well under the gate ~~c s2' Finally, as shown in Pig.…”