Design and realization of deep trench superjunction diode for 600V applications

Abstract

The purpose of this paper is to present the Deep Trench SuperJunction Diode (DT-SJDiode) optimization and realization with a 600V breakdown voltage. We present technological and geometrical parameters influences on the breakdown voltage with simulations performed with Sentaurus TCAD. Previous works allowed to validate some critical technological process steps and to create a technological process for 1200V breakdown voltage applications. The main point here is to optimize those process steps (trench verticality, termination fulfilling...), which have an important influence on the electrical properties, in order to fabricate a 600V breakdown voltage DT-SJDiode. RESUME-L'objectif de ce papier est de présenter l'optimisation et la réalisation d'une diode à superjonction et à tranchées profondes et de sa terminaison (DT-SJDiode) pouvant tenir des tensions de 600 V à l'état bloqué. Nous étudierons l'influence des paramètres technologiques et géométriques sur la tenue en tension à partir de simulations effectuées sous Sentaurus TCAD. Des travaux précédents ont permis de valider certaines étapes technologiques et de dégager un procédé de fabrication pour des applications à 1200V. Il s'agit ici d'optimiser ces différentes étapes qui influent sur les paramètres électriques (verticalité des tranchées, remplissage des tranchées de terminaison de jonction, …) pour des applications à 600V.

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