No abstract

No abstract

No abstract

No abstract

A numerically efficient model for the simulation of ion implantation doping profiles in silicon after pulsed plasma immersion ion implantation is suggested. The model is based on an analytical formula for the energy distribution of the ions extracted from the plasma and on the application of this energy distribution in a Monte-Carlo simulator for conventional ion implantation. The model is verified using examples of BF 3 and AsH 3 plasmas for p-type and n-type doping in silicon, respectively