Design and Realization of GaN Trench Junction-Barrier-Schottky-Diodes

Li, Wenshen; Nomoto, Kazuki; Pilla, Manyam; Pan, Ming; Gao, Xiang; Jena, Debdeep; Xing, Huili Grace

doi:10.1109/ted.2017.2662702

Cited by 90 publications

(50 citation statements)

References 21 publications

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“…The integrated SBD in this work was benchmarked against state-of-the-art vertical SBDs on silicon, sapphire and GaN substrates in Fig. 5, revealing state-of-the-art performance compared to vertical GaN-on-Si SBDs [17], [18], [27][28][29][30][31][32][33][34][35][36][37][38]. The V BR of the integrated MOSFET-SBD can be significantly improved: 1.…”

Section: Resultsmentioning

confidence: 86%

See 1 more Smart Citation

Vertical GaN-on-Si MOSFETs With Monolithically Integrated Freewheeling Schottky Barrier Diodes

Liu

Khadar

Matioli

2018

IEEE Electron Device Lett.

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1 Abstract-We demonstrate for the first time the monolithic integration of vertical GaN MOSFETs with freewheeling Schottky barrier diodes (SBD), based on a 6.7-μm-thick n-p-n heterostructure grown on 6-inch silicon substrates by metal organic chemical vapor deposition. The anode of the SBD is integrated in the source pad of the MOSFET and the cathode is directly connected to the MOSFET drain through the bottom n + -GaN layer, eliminating the need of any metal wire interconnection. This monolithic integration scheme offers reduced footprint, minimized parasitic components and simplified packaging. The integrated MOSFET-SBD showed enhancement-mode operation with a threshold voltage of 3.9 V, an on/off ratio of over 10 8 and a dramatic improvement in reverse conduction, without degradation in on-state performance from the integration of the SBD. The integrated GaN-on-Si vertical SBD exhibited excellent performance, with a specific on-resistance of 1.6 mΩ·cm 2 , a turn-on voltage of 0.76 V, an ideality factor of 1.5, along with a breakdown voltage of 254 V. These results reveal the promising potential of emerging GaN vertical devices for future power converters.

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Section: Resultsmentioning

confidence: 86%

“…By employing field plate, edge termination, and guard ring technologies [32][33][34]; 4. By utilizing trench or junction SBD architecture [35][36][37][38][39]. This excellent performance shows the great potential of GaN vertical devices for future power converters.…”

Section: Resultsmentioning

confidence: 93%

Vertical GaN-on-Si MOSFETs With Monolithically Integrated Freewheeling Schottky Barrier Diodes

Liu

Khadar

Matioli

2018

IEEE Electron Device Lett.

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“…RESURF vertical SBDs can achieve a high BV since the depletion of the Schottky contact in the vertical direction is reinforced by the adjacent PN junction [77][78][79]. Li et al [80] studied the reduced surface field (RESURF) impact on JBS diodes, and reported that the vertical surface field within the trench is much reduced compared to conventional SBD, as shown in Figure 8b. Zhang et al [75] reported a novel GaN trench metal-insulator-semiconductor (MIS) barrier Schottky diode with trench field rings, as shown in Figure 7b.…”

Section: Reduced Surface Field (Resurf)mentioning

confidence: 99%

Review of the Recent Progress on GaN-Based Vertical Power Schottky Barrier Diodes (SBDs)

et al. 2019

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Gallium nitride (GaN)-based vertical power Schottky barrier diode (SBD) has demonstrated outstanding features in high-frequency and high-power applications. This paper reviews recent progress on GaN-based vertical power SBDs, including the following sections. First, the benchmark for GaN vertical SBDs with different substrates (Si, sapphire, and GaN) are presented. Then, the latest progress in the edge terminal techniques are discussed. Finally, a typical fabrication flow of vertical GaN SBDs is also illustrated briefly.

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“…Ion implantation is not the only method to fabricate JBSD. Li et al demonstrated trench JBSD, which eliminate the ion implantation step [53]. The schematics of the trench JBSD is shown in Figure 4b.…”

Section: Sbd Device Fabrication and Device Structure Optimizationmentioning

confidence: 99%

GaN-Based Schottky Diode

Wang¹

2018

Disruptive Wide Bandgap Semiconductors, Related Technologies, and Their Applications

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Schottky diode, also known as Schottky barrier diode (SBD), fabricated on GaN and related III-Nitride materials has been researched intensively and extensively for the past two decades. This chapter reviews the property of GaN material, the advantage of GaN-based SBD, and the Schottky contact to GaN including current transporation theory, Schottky material selection, contact quality and thermal stability. The chapter also discusses about the GaN lateral, quasi-vertical and vertical SBDs, and AlGaN/GaN field effect SBDs: the evolution of the epitaxial structure, processing techniques and device structure. The chapter closes with challenges ahead and gives an outlook on the future development of the GaN SBDs.

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Design and Realization of GaN Trench Junction-Barrier-Schottky-Diodes

Cited by 90 publications

References 21 publications

Vertical GaN-on-Si MOSFETs With Monolithically Integrated Freewheeling Schottky Barrier Diodes

Vertical GaN-on-Si MOSFETs With Monolithically Integrated Freewheeling Schottky Barrier Diodes

Review of the Recent Progress on GaN-Based Vertical Power Schottky Barrier Diodes (SBDs)

GaN-Based Schottky Diode

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