Design and simulation in GaN based light emitting diodes using focused ion beam generated photonic crystals

Wu, G.M.; Cai, Zhiyuan; Wang, J.C.; Nee, Tzer‐En

doi:10.1016/j.surfcoat.2009.02.116

Cited by 6 publications

(2 citation statements)

References 8 publications

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“…PhC has PBG due to its periodic dielectric structure and different frequency 16 and can be used in many applications, including the fabrication of lossless dielectric, mirrors, and resonant cavities for optical light. 17 Wide bandgap III-nitride semiconductor, such as gallium nitride (GaN), is well-known optoelectronic material for light-emitting diodes and laser application. 18,19 However, it has been recently determined as a potential material system for technologies, such as PhC-based circuits and applications.…”

Section: Introductionmentioning

confidence: 99%

Design of 2D GaN photonic crystal based on hole displacement for L3 cavity

Zamani

Nawi

Berhanuddin

et al. 2020

Nanomaterials and Nanotechnology

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In this article, we report modeling, simulation, and analysis of shifting 2D photonic crystal cavity side holes in GaN-AlN-sapphire layered structure. The design was simulated with Lumerical finite-difference time-domain. A lattice constant a, 157 nm, and a hole diameter d, 106 nm, were used in the design. The cavities are based on L3, which we demonstrated by simply shifting two holes away from a line cavity with distances of 132, 142, and 152 nm, respectively. The highest quality factor, Q, value achieved is 2.25 × 104 at 152-nm cavity distance.

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Section: Introductionmentioning

confidence: 99%

Design of 2D GaN photonic crystal based on hole displacement for L3 cavity

Zamani

Nawi

Berhanuddin

et al. 2020

Nanomaterials and Nanotechnology

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“…The uniformity has been difficult to control. A more precise control of the surface nanopatterning could be developed by high energy and excellent precision focus ion beam (FIB) technology [7]. The flexibility in pattern design is a major advantage over the other techniques.…”

Section: Introductionmentioning

confidence: 99%

Improved Light Extraction Efficiency by Photonic Crystal Arrays on Transparent Contact Layer Using Focused Ion Beams

Tsai

Kung

et al. 2011

Acta Phys. Pol. A

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Nitride-based thin-film materials have become increasingly important for the high brightness light-emitting diode applications. The improvements in light extraction and lower power consumption are highly desired. Although the internal quantum efficiency of GaN-based LED has been relatively high, only a small fraction of light can be extracted. In this study, a new design of two-dimensional photonic crystal array has been prepared on the top transparent contact layer of indium-tin oxide film to improve the light extraction efficiency using focused ion beam. The acceleration voltage of the Ga dual-beam nanotechnology system SMI 3050 was 30 kV and the ion beam current was 100 pA. The cylindrical air holes had the diameter of 150 nm and depth of 100 nm. The micro photoluminescence analysis results showed that the light output intensity could be 1.5 times of that of the non-patterned control sample. In addition, the structural damage from the focused ion beam drilling of GaN step could be eliminated. The excellent I-V characteristics have been maintained, and the external light extraction efficiency would be still improved for the LED devices.

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Preparation and characterization of GaN photonic crystal arrays by focused ion beam technology

Yen

Tsai

et al. 2011

Surface and Coatings Technology

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Design and simulation in GaN based light emitting diodes using focused ion beam generated photonic crystals

Cited by 6 publications

References 8 publications

Design of 2D GaN photonic crystal based on hole displacement for L3 cavity

Design of 2D GaN photonic crystal based on hole displacement for L3 cavity

Improved Light Extraction Efficiency by Photonic Crystal Arrays on Transparent Contact Layer Using Focused Ion Beams

Preparation and characterization of GaN photonic crystal arrays by focused ion beam technology

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