Design and simulation of a high performance dopingless p-tunnel field effect transistor

Abstract

In this paper, we propose a novel p-type dopingless tunnel field effect transistor (DL-p-TFET). The proposed DL-p-TFET device does not use conventional ion implantation or diffusion for realizing source and drain regions; these regions are created by using metals of different work function, a charge plasma concept. It has been observed that by optimizing the source and gate electrode gap (L gap,S ) and oxide thickness under source electrode (T oxide,S ) in the proposed DL-p-TFET device, better performance can be obtained in comparison to the conventional doped p-TFET (D-p-TFET). The 2D simulation study has shown a significant improvement in ON current (I on ), cutoff frequency (f T ) and subthreshold slope (SS) in the proposed device in comparison to the conventional D-p-TFET. It is found observed that the I ON , f T and SS in the proposed DL-p-TFET are increased by 156%, 2.5% and 133%, respectively, in comparison to the conventional D-p-TFET. Since the proposed device is dopingless, it is free from random dopant fluctuations issues and can be processed at low temperatures.Index Terms-Dopingless, ion implantation, random dopant, tunneling field effect transistor.

A high performance charge plasma PN-Schottky collector transistor on silicon-on-insulator

“…Figure 4 shows the band diagrams of the proposed PN-SC-BCPT device under both equilibrium (with V BE = 0 V and V CE = 0 V) and non-equilibrium conditions such as forward active mode (with V BE = 0.7 V and V CE = 1 V). Figure 4(a) shows the Fermi levels are aligned for both electrons and holes in the equilibrium state, similar to the PNP-BCPT device in [27]. As expected, the alignment of Fermi levels breaks in a non equilibrium state, such as forward active mode.…”

“…The proposed PN-SC-BCPT device has addressed one of the major problems of PNP-BCPT device [27]. The poor cutoff frequency problem has been addressed and a significant improvement in the cutoff frequency has been achieved in the proposed PN-SC-BCPT device.…”

“…Figure 1 1. The doping concentration in the conventional PNP-BJT is the same as has been used in [27]. The emitter, base and collector doping concentration in the conventional PNP-BJT on SOI device are p E = 2 × 10 18 /cm3, n B = 1 × 10 20 /cm3 and p C = 2 × 10 17 cm −3 , respectively.…”

“…The 2D simulation studies of proposed PN-SC-BCPT device have been done by using Atlas [26] device simulator. The key characteristics of the proposed device have been compared with the conventional PNP-BJT [27] and PNPbipolar charge plasma transistor (PNP-BCPT) devices [27]. The study has revealed that a significantly high β is obtained in the proposed PN-SC-BCPT device (∼2100) in comparison to PNP-BCPT (∼1450) and the conventional BJT (∼9) devices, respectively.…”

Vertical tunneling FET with Ge/Si doping-less heterojunction, a high-performance switch for digital applications

“…Gate Voltage (V) www.nature.com/scientificreports/ in Ref. 43 . Additionally, we have plotted the transfer characteristics of PDL-TFET, which shows more-optimum performance for low-power applications.…”