Design and simulation of a novel GaN based resonant tunneling high electron mobility transistor on a silicon substrate

Abstract

For the first time, we have introduced a novel GaN based resonant tunneling high electron mobility transistor (RTHEMT) on a silicon substrate. A monolithically integrated GaN based inverted high electron mobility transistor (HEMT) and a resonant tunneling diode (RTD) are designed and simulated using the ATLAS simulator and MATLAB in this study. The 10% Al composition in the barrier layer of the GaN based RTD structure provides a peak-to-valley current ratio of 2.66 which controls the GaN based HEMT performance. Thus the results indicate an improvement in the current–voltage characteristics of the RTHEMT by controlling the gate voltage in this structure. The introduction of silicon as a substrate is a unique step taken by us for this type of RTHEMT structure.

A GaN/InGaN/AlGaN MQW RTD for versatile MVL applications with improved logic stability

“…The current density quantity of the proposed RTD is close to those reported in references [5,7] and one order higher than that reported in Ref. [4]. Its PVCR = 6.17 is about 50% higher than those reported in Refs.…”

“…Its PVCR = 6.17 is about 50% higher than those reported in Refs. [4,5,7] and about an order lower than that reported in Ref. [8].…”

“…Accompanying the development of III-nitrides materials and devices, increasing attention has been paid to the GaNbased resonate tunneling diode (RTD) because of its excellent properties such as wider direct band gap, larger band offset, higher peak electron velocity, higher critical breakdown voltage and higher thermal stability than those of GaAs/Al-GaAs and Si/GeSi counterparts [1][2][3][4][5][6][7][8][9][10] . In particular, conduction band offsets in the InGaN/AlGaN system are larger than those in the InGaAs/AlGaAs system and a built-in electric field exists owing to the piezoelectric polarization effects, the former appeared to have very interesting negative differential resistance (NDR) related properties and became considerably attractive during the last decade [1, 3-5, 7, 8, 10] .…”

“…However, the first NDR region of most GaAs and GaNbased RTD current-voltage curves reportedly consists of only a very narrow linear NDR or a very narrow linear NDR followed with an exponential tail and without a visible hysteresis loop, which is harmful to the logic stability of MSM and MVL circuits. The maximum total NDR region width { 2 201 } (TNRW) of AlGaN/InGaN/AlGaN/InGaN/AlGaN/InGaN/Al-GaN RTD on cubic GaN substrate reported by Yahyaoui et al is observed at about 0.048 V with Al composite at 0.5 [4] . The maximum TNRW of GaAs/AlGaAs ADBS RTD reported by Zhang et al is observed at about 0.16 V with a 2.0 nm wide emitter barrier, 3.8 nm wide QW, 1.9 nm wide collector barrier, 0.35 Al composite of the emitter barrier and 0.5 Al composite of the collector barrier [6] .…”

Impact of varying buffer thickness generated strain and threading dislocations on the formation of plasma assisted MBE grown ultra-thin AlGaN/GaN heterostructure on silicon

“…6 Several approaches by previous researchers illustrated the growth of such thin heterostructures on different substrate such as sapphire or free standing/Lateral epitaxial overgrowth (LEO)/Kyma GaN. 7,8 Till now, no significant research has been done for the growth of ultra-thin barrier-well-barrier AlGaN/GaN/AlGaN heterostructure on silicon substrate.…”