Design and simulation of double-heterojunction solar cells based on Si and GaAs wafers

Abstract

This article demonstrates the novel designs of Si and GaAs wafer-based double-heterojunction (DH) solar cells using SCAPS-1D simulator. Simple five-layer solar cells are proposed here: cells comprised of a cathode metal layer, three layers of semiconductor materials in the III–V, II–VI and group IV families--and a layer of anode metal. The device structures have been optimized for the analysis of the power-conversion efficiency (PCE) of the Si and GaAs solar cells considering high defect densities at and near each heterojunction. The PCEs predicted are 38% and 38.9% for n-ZnSe/p-Si/p +-Al0.8Ga0.2Sb and n-ZnSe/p-GaAs/p +-AlAs0.9Sb0.1 cells, respectively which stay entirely within the PCE limits set by the Shockley–Queisser theory of multi-junction cell. These results reveal that high efficiency and hence cost-effective Si and GaAs wafer-based DH solar cells can be fabricated in the near future.

Photovoltaic Solar Cells: A Review

“…In the forward bias, both types of carriers are injected into the intrinsic layer, leading to an increase in the carriers' density and consequently the output current. The direct and flexible bandgap of the p-i-n double heterostructures offers a unique opportunity to develop highly efficient solar cells [44][45][46]. An experimental work by [47] focused on developing a p-i-n PV model with the compound materials AlGaInP/AlGaAs.…”

“…The behaviour of a PV system can be simulated by various computer-based tools, such as MATLAB/Simulink [86], COMSOL Multiphysics [44], ANSYS [87], ABAQUS [88], and PCID [89], which is important to understand the operation of PV devices [90,91].…”

“…such as light trapping, layer thickness, band structure, doping level, and many parameters that influence the obtained characteristics of PV cells. A theoretical model for GaAs-based solar cells with a p-i-n structure was analyzed by [44]. The influence of varying basic parameters on the obtained power was investigated using COMSOL Multiphysics.…”

24% Efficient, Simple ZnSe/Sb2Se3 Heterojunction Solar Cell: An Analysis of PV Characteristics and Defects

“…The material and interface parameters used for the simulation analysis are shown in Tables and , respectively. These parameters were based on the literature. , The simulation was done under AM 1.5 G, 1000 W m –2 illumination intensity, at 300 K. For the absorber and buffer layers, thermal velocity was taken as 10 7 cm s –1 .…”

“…These parameters were based on the literature. 32 , 33 The simulation was done under AM 1.5 G, 1000 W m –2 illumination intensity, at 300 K. For the absorber and buffer layers, thermal velocity was taken as 10 7 cm s –1 .…”