Design Considerations and Development of an Innovative Gate Driver for Medium-Voltage Power Devices With High $dv/dt$

Anurag, Anup; Acharya, Sayan; Prabowo, Yos; Gohil, Ghanshyamsinh; Bhattacharya, Subhashish

doi:10.1109/tpel.2018.2870084

Cited by 98 publications

(47 citation statements)

References 19 publications

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“…In literature, most commonly air or tape-insulated transformers with discrete windings [29]- [34] or PCB windings [35] are used to isolate the power supplies of gate drivers employed in MV SiC applications. In some cases however, these transformers are up to 10 times larger than the 10 kV SiC module shown in Fig.…”

Section: Introductionmentioning

confidence: 99%

Highly Compact Isolated Gate Driver With Ultrafast Overcurrent Protection for 10 kV SiC MOSFETs

Rothmund¹,

Bortis²,

Kolar³

2018

CPSS TPEA

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Section: Introductionmentioning

confidence: 99%

Highly Compact Isolated Gate Driver With Ultrafast Overcurrent Protection for 10 kV SiC MOSFETs

Rothmund¹,

Bortis²,

Kolar³

2018

CPSS TPEA

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“…For this study, the DC/DC supply R12P215S/P1 by RECOM has been chosen, which has a parasitic capacitance rated from 1.5 pF to maximum 10 pF and is tested for an isolation voltage of 6.4 kV. Increasing the isolation voltage and maintaining a low-parasitic capacitance involves using a custom built solution [31][32][33][34], which has been disregarded for the tests in this study. The switch is constructed using the modular cell-based approach as shown in Fig.…”

Section: Modular Cell-based Approachmentioning

confidence: 99%

Analysis of cascaded silicon carbide MOSFETs using a single gate driver for medium voltage applications

Jørgensen

Sønderskov

Bęczkowski

et al. 2020

IET Power Electronics

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Medium voltage power supplies for applications such as electrostatic precipitators are used in industrial plants to remove particles from fumes. Current solutions based on silicon devices rely on high-voltage transformers to reach the required output voltage levels. New wide band gap materials such as silicon carbide have higher electric breakdown voltage, and thus fewer devices are required in series to withstand the output voltage. Owing to the faster switching speed of silicon carbide devices further demands are put on the serialisation method. In this study, a cascaded series-connection method using only a single external gate signal is analysed in detail, guidelines to size the resistor-capacitor-diode-snubber are proposed and its applicability is experimentally demonstrated. The circuit is tested with four series-connected devices in a double pulse test at 2400 V and current levels of 250-800 mA to show the load dependence. The serialisation technique is tested in a boost converter operating in discontinuous conduction mode but is limited to 1200 V due to an oscillating state occurring after zero current crossing. Finally, the technique is tested at 2400 V and 10 kHz in a synchronous boost converter, which demonstrates the proposed design guidelines.

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“…The controller and power circuit shall not share a common ground reference. This is achieved by using one of the following methods [10,21]:…”

Section: Signal Isolationmentioning

confidence: 99%

“…The controller and power circuit shall not share a common ground reference. Thisis achieved by using one of the following methods [10, 21]: (i) Transformer isolation. (ii) Optical isolation. (iii) Optical fibre isolation. A typical transformer and optical isolation‐based gate driving is shownin Fig. 4.…”

Section: Generic Gdc Designmentioning

confidence: 99%

Analysis, design, and implementation of an improved gate driver forhigh switching frequency EV application

Tomar

Sandeep

Verma

et al. 2020

IET Power Electronics

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Electric vehicle (EV) battery chargers operate from moderate switching frequency (MSF) to high switching frequency (HSF) to achieve high power density. To operate the HSF power electronic devices, the selection of gate drivers and its associated components is crucial. Laboratory developed gate driver circuits (GDCs) often fail to drive these HSF devices adequately due to noise vulnerability, PWM duty loss and common-mode currents. Further, at MSF and HSF ranges, the gateto-source terminals of the device are subjected to high voltages due to unwanted noise resulting in false turn-on of the switch leading to the converter failure. In this paper, firstly, an improved GDC and it's associated component selection criteria are proposed for HSF EV application. The proposed GDC is simple in structure with minor components; thus, it is cost-effective and highly reliable. Secondly, the proposed GDC is compared with the other commercially available competent GDCs. Power losses, cost and dynamic switching performance are the figures-of-merit for the quantitative assessment. From the comparison, it will be shown that the proposed GDC exhibits an overall superior performance among the popular GDCs. Finally, the distinctive features of the proposed GDC are experimentally validated for several test cases and the obtained results are presented.

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Design Considerations and Development of an Innovative Gate Driver for Medium-Voltage Power Devices With High $dv/dt$

Cited by 98 publications

References 19 publications

Highly Compact Isolated Gate Driver With Ultrafast Overcurrent Protection for 10 kV SiC MOSFETs

Highly Compact Isolated Gate Driver With Ultrafast Overcurrent Protection for 10 kV SiC MOSFETs

Analysis of cascaded silicon carbide MOSFETs using a single gate driver for medium voltage applications

Analysis, design, and implementation of an improved gate driver forhigh switching frequency EV application

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