Design considerations and experimental analysis for silicon carbide power rectifiers

Electrically driven single InGaN/GaN quantum dot emission

“…This was previously observed for GaN p-i-n diodes 10 and was explained by the presence of several deep and shallow impurity levels in the bandgap, which can act as recombination sites. 11 In our case, the existence of quantumconfined structure may also contribute to this effect as will be demonstrated later. In addition, current jumps are observed to occur at 3.2 and 4.45 V in the case of the presented mesa.…”

Vertical and lateral GaN rectifiers on free-standing GaN substrates

“…7 The forward turn-on voltage was still ϳ1.8 V, which is close to the minimum expected for a GaN rectifier with a V B of 700 V and assuming a barrier height of 1.1 eV. 24 The ratio V B /V F is ϳ389 and the forward current density could be pushed above 1000 A cm Ϫ2 . A plausible explanation for the large improvement in V B in the vertical geometry may be not only in the larger thickness in this direction ͑200 m͒ compared to the 30 m spacing between Schottky and ohmic contacts in the lateral direction, but also in the fact that the vertical depletion mode would minimize surface breakdown problems.…”

Switchable wetting & flexible SiC thin film with nanostructures

“…Then, a SiC membrane with the thickness of 2m was grown on Si substrate by PECVD at 300 o C. The reaction gases contained SiH 4 , CH 4 and Ar, whose gas flows were 20 sccm, 400 sccm and 400 sccm, respectively. The internal stress of SiC film was reduced to below 10 MPa by the thermal annealing at 450 o C for 50min, as is shown in Figure 1 Then an improved DRIE process with passivation enhancement was utilized to fabricate high-dense SiC nanostructure surface.…”

“…In the last decades, silicon carbide (SiC) has attracted much attentions due to its unique properties, such as wide bandgap, outstanding electronic features, high Young's modulus and hardness, excellent oxidation and corrosion durability, and excellent chemical and physical stability [1][2][3][4][5]. SiC material has been widely used not only in scientific researches but also in industrial fields, such as stencil lithography, anodic bonding, anti-high-temperature package, sensors and actuators working in complex and harsh environment, and so on [6][7][8][9][10].…”