Design considerations of the sub-50 nm self-aligned double gate MOSFET with a new channel doping profile

Huaxiang, Yin; Xu, Qing

doi:10.1109/icsict.2001.981535

2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443)

DOI: 10.1109/icsict.2001.981535

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Design considerations of the sub-50 nm self-aligned double gate MOSFET with a new channel doping profile

Yin Huaxiang¹,

Qing Xu²

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Design considerations of the sub-50 nm self-aligned double gate MOSFET with a new channel doping profile

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