Design Considerations on a Monolithically Integrated, Self Controlled and Regenerative 900 V SiC Circuit Breaker

A Monolithically Integrated SiC Circuit Breaker

“…This is of particular importance since the floating source potential V SK is determined by the ohmic voltage divider formed by the JFETs. V SK is decisive with regard to the drain-source voltage and the gate-source voltage of both JFETs and, consequently, to their operating points [24]. Therefore, a variation of the pJFET on-state resistance compulsorily affects the nJFET transition from linear to saturation region, which explains the general correlation of R on,sp and J trig .…”

“…1b. In blocking mode, the maximum of the electric field is located at the edges of the pWell regions [24]. However, a considerable amount of the circuit breaker forward voltage V AK drops across the pJFET gate-channel junction.…”

“…causes a considerable current across both channel regions as depicted by the dotted line in Fig. 1b [24]. Therefore, region III marks the voltage window V block , in which the circuit breaker is considered in self-sustained blocking mode.…”

“…In order to decrease R on,sp , utilisation of higher pJFET channel dose poses an adequate measure, as can be assumed from Fig. 4 and TCAD simulation [24]. Individual pJFET active area scaling is also a promising method for future integration approaches.…”

“…In cascode configuration, operation up to 400 V DC was presented [22], [23]. Moreover, TCAD modelling was employed to derive first design guidelines for monolithic integration [24]- [26].…”