Design construction and performance of nanostructured p-Cu2S/n-CdS junction diode

Kumar, Mahendra; Kumar, C. Suresh; Saxena, Deepti; Singh, Dinesh; Sharma, Sachin; Saxena, K. M. S.

doi:10.1016/j.matlet.2022.133650

Cited by 9 publications

(1 citation statement)

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“…[ 1 ] In addition, it is a n‐type semiconductor with a direct bandgap of ≈2.42 eV or 514.5 nm (in wavelength units), a strong absorption coefficient of 4 × 10 4 cm −1 , a large energetic conduction band of −1.0 V versus normal hydrogen electrode (NHE) and a high electron density at room temperature (300 K). [ 2,3 ] These above merits make the CdS find wide application in paint and semiconductor‐based device industries, such as luminescence devices, [ 4 ] transistors and light‐emitting diodes, [ 5,6 ] nonlinear optics, [ 7 ] photocatalysis, [ 8 ] resistors, [ 9 ] thin film solar cells, [ 10 ] piezotransducers, [ 11 ] and photoelectrochemical devices. [ 12 ] Other than photocatalysis, the abovementioned applications use CdS thin film rather than nanoparticles (powder).…”

Section: Introductionmentioning

confidence: 99%

Elaboration and Characterization of CdS Nanostructures Using Pulse‐Assisted Electrodeposition: Effect of Time‐Off Duration

Lahmar,

Kara,

Hamza

et al. 2024

Physica Status Solidi (a)

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The presence of metallic cadmium in the electrodeposited cadmium sulfide (CdS) films is a persistent problem that leads to low photoactivity. Changing the deposition mode is a way to address this problem and thus increase the photoelectrochemical performance. Herein, the effect of the deposition mode on the composition of the CdS films prepared under the same deposition parameters is investigated for the first time. In addition, the influence of the time‐off duration on the properties of the electrodeposited thin films is studied. The results of the X‐Ray diffraction, UV–vis spectroscopy, atomic force microscopy, and photoelectrochemical characterizations reveal that the pulse‐deposited CdS films show enhanced microstructural, optical, and morphological properties as compared to that of the film deposited under direct mode. The CdS thin film deposited at time‐off duration of 0.5 s is composed of a pure CdS phase following a mixture of cubic and hexagonal lattice structure. This sample shows a smooth surface, high absorption in UV and visible light and an intense photoresponse of 90 μA under visible light.

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