Reframe of Fowler-Northeim Approach for Electron Field Emission of a Vertical Silicon Nanowires

The dopant (n- and p-type)-, band gap-, size- and stress-dependent field electron emission of silicon nanowires

“…11,46 Moreover, the peak shifting in BE (eV) between Si 2p 3/2 and 2p 1/2 was Δ = 0.6 eV. 47 The Si NWs are totally oxygen-free, as no SiO 2 peaks are detected around 103 eV for both the samples, which clearly indicates that the Si NWs do not contain the oxide layers, which are successfully removed after immersing in HF solution (2%).…”

“…Urbach et al first introduced the spectral dependency of the optical absorption coefficient ( α ) on incident energy below the energy gap; the correlation between the optical absorption coefficient ( α ) and incident photon energy ( hυ ) is expressed as , 57,58 where α 0 is a constant and E U is the Urbach band energy, often signifying the band tail width. As discussed earlier, the absorption coefficient is analogous to the K–M coefficient, and so the equation can be modified as 47 , and the plot of ln F ( R ) vs. photon energy ( hυ ) below the energy gap is shown in Fig. 4(c) and (d).…”