Design driven patterning optimizations for low K&lt;inf&gt;1&lt;/inf&gt; lithography

Agarwal, Kanak; Banerjee, Shayak

doi:10.1109/icicdt.2012.6232834

Cited by 2 publications

(1 citation statement)

References 15 publications

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“…Retargeting has been adopted to improve pattern fidelity through modifying the target pattern itself along with the mask at the cost of long computation time [24]. Process variations have been effectively considered through including the intensity slope in the cost function in simultaneous mask and target optimization (SMATO) algorithm [25].…”

Section: Recent Researchmentioning

confidence: 99%

Optical Proximity Correction (OPC) Under Immersion Lithography

Ahmed¹,

Takahashi²,

Kodaman³

2018

Micro/Nanolithography - A Heuristic Aspect on the Enduring Technology

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As advanced technology nodes continue scaling down into sub-16 nm regime, optical microlithography becomes more vulnerable to process variations. As a result, overall lithographic yield continuously degrades. Since next-generation lithography (NGL) is still not mature enough, the industry relies heavily on resolution enhancement techniques (RETs), wherein optical proximity correction (OPC) with 193 nm immersion lithography is dominant in the foreseeable future. However, OPC algorithms are getting more aggressive. Consequently, complex mask solutions are outputted. Furthermore, this results in long computation time along with mask data volume explosion. In this chapter, recent state-of-the-art OPC algorithms are discussed. Thereafter, the performance of a recently published fast OPC methodology-to generate highly manufactured mask solutions with acceptable pattern fidelity under process variations-is verified on the public benchmarks.

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Section: Recent Researchmentioning

confidence: 99%