2018
DOI: 10.1016/j.sse.2018.08.005
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Design, fabrication and characterization of SAW devices on LiNbO3 bulk and ZnO thin film substrates

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Cited by 26 publications
(7 citation statements)
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“…Magnetic field H is applied in the xz plane with an angle θ H from the z axis, resulting in the magnetization in the xz plane with an angle θ from the z axis. symmetry (36), the propagation direction dependence of the nonreciprocity and its close relationship with the evolution of v SAW show that the nonreciprocity is also controlled by the crystal symmetry, and the angular momentum L z originates from the piezoelectric substrate with the xz mirror symmetry breaking.…”
Section: Crystal Origin Of the Phononic Angular Momentummentioning
confidence: 87%
“…Magnetic field H is applied in the xz plane with an angle θ H from the z axis, resulting in the magnetization in the xz plane with an angle θ from the z axis. symmetry (36), the propagation direction dependence of the nonreciprocity and its close relationship with the evolution of v SAW show that the nonreciprocity is also controlled by the crystal symmetry, and the angular momentum L z originates from the piezoelectric substrate with the xz mirror symmetry breaking.…”
Section: Crystal Origin Of the Phononic Angular Momentummentioning
confidence: 87%
“…Both the heat damage to the edges of the resonators and the limited depth of the trenches reduce the edge reflectivity, thus increasing energy losses and reducing the quality factor. Additionally, the number, shape, height, and dimensions of IDT fingers affect the quality factor of the SAW resonators [79][80][81]. Optimizing them can help reduce energy losses and increase the quality factor.…”
Section: Sensor Validationmentioning
confidence: 99%
“…LiNO 3 shows high thermal stability (T c = 1140 • C), thus LiNO 3 SAW devices are very appropriate for high temperature applications. Duan et al have reported LiNO 3 SAW device for wireless sensor application with well temperature dependency [51]. The temperature coefficient of frequency of 16 µm wavelength devices was −87.5 ppm/ • C and was −72.41 ppm/ • C for 12 µm wavelength devices.…”
Section: Surface Acoustic-wave Devicesmentioning
confidence: 99%