Design for electron beam: A novel approach to electron beam direct writing throughput enhancement for volume production

Abstract

Multiple beam sub-80 -nm lithography with miniature electron beam column arraysThe ordinal shot count reduction in the character projection based electron beam ͑EB͒ maskless lithography is done by the recognition of the repeatability of physical design data. Nevertheless, the reduction efficiency is limited to around four times. The new concept of design for electron beam enables a much higher shot count reduction rate of more than ten times and enables a drastic throughput enhancement. Using this method, the authors created an EB friendly design layout data by tracing back to upstream design flow and this is the most characteristic feature of this methodology.

Evaluation of maskless electron beam direct writing with double character projection apertures

“…A cell library development methodology for throughput enhancement has been reported, where frequently-appeared patterns on a CAD layout are selected as characters of the CP method [1]. As recent advanced techniques, CP friendly design flow [2] and new direct write techniques like the multi-column cell system (MCC) [3] have been developed. As far as we know, however, cost evaluation has not been reported.…”

Characterization of Fogging and Develop-Loading Effects in Electron-Beam Direct-Writing Technology

“…Electron-beam direct-writing (EBDW) technology is the primary solution for the cost-effective production of a wide variety of LSIs in small quantities. [1][2][3][4][5] It also seems to be one of the most promising techniques for manufacturing nextgeneration LSIs by multiple EB writing. [6][7][8][9][10][11][12][13] Owing to the continuing decrease in LSI feature size, higher critical dimension (CD) accuracy is required.…”