Design for Reliability and Common Failure Mechanisms in Vertical Cavity Surface Emitting Lasers

Herrick, Robert W.

doi:10.1557/opl.2012.903

Cited by 7 publications

(4 citation statements)

References 11 publications

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“…And such random failure caused by the latent damage or hidden flaw cannot always be screened out through the burn-in process. Our randomly failed VCSELs typically showed the dendritic type of defect patterns, which agreed with the reported result in literature [12], [17], [18], we therefore wanted to find how such featured patterns could possibly be formed. Understanding the dynamic process of defect generation and expansion in VCSELs is essential for improving their reliability.…”

Section: Introductionsupporting

confidence: 88%

“…where D represents the average distance from the defect source to the initial aggregation point. This is because for any point 0 ≤ 𝑥 ≤ 𝑙, the time required for a diffusion process from D to x is given by the integrand in (18) according to (17). The total required time for x to move from 0 to l is therefore given by (18).…”

Section: Appendix A: Dla-based Solution Techniquementioning

confidence: 99%

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Dynamic Modeling of Stress-Induced Defect Expansion in VCSELs

Zhang,

Li,

Zhao

2024

IEEE Photonics J.

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Many failures of semiconductor-based oxide confined vertical cavity surface emitting lasers (VCSELs) are closely related to the generation and expansion of defects in the device structure. However, existing research has predominantly focused on the static study of defect morphology, with little attention given to analyzing the dynamic process of defect expansion, which limited our ability to predict device random failures due to lack of understandings on defect generation and expansion. To address this issue, we present a macroscopic phenomenological evolution model that describes the dynamic expansion of defects in VCSELs, in which the expansion of defects is treated as an anisotropic lattice strain diffusion process. We further exploit a diffusion-limited aggregation (DLA) method in solving the diffusion equation, which describes the random propagation and aggregation of strain in the vicinity of highly strained areas, resulting in defect formation when the stress from accumulated strain surpasses the bonding force of the atoms in the lattice. Our simulation result manages to replicate the dendritic expansion morphology of defects, aligning with experimental observations very well. Our model also predicts an accelerated defect expansion process, which is again consistent with the experimental result. This model finds relevance in applications such as random failure prediction through device aging, burn-in condition setting in device screening, and device structural and/or material design improvement for mitigating defect expansion.

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Section: Introductionsupporting

confidence: 88%

Section: Appendix A: Dla-based Solution Techniquementioning

confidence: 99%

Dynamic Modeling of Stress-Induced Defect Expansion in VCSELs

Zhang,

Li,

Zhao

2024

IEEE Photonics J.

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“…10) For a more complete discussion of common VCSEL failure mechanisms, please refer to our recent publications. 9,11) …”

Section: Vcsel Failure Mechanismsmentioning

confidence: 99%

Reliability of Vertical-Cavity Surface-Emitting Lasers

Herrick

2012

Jpn. J. Appl. Phys.

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Vertical-cavity surface-emitting lasers (VCSELs) are among the least expensive lasers available, and have been widely deployed for data communications and illumination applications. They have also proved to be one of the most reliable types of lasers, due to the lack of exposed facets, and the relatively small area of the chip that is vulnerable to defects. We discuss measures that have proven necessary to obtain good reliability, focusing especially on reliability qualification and analysis. We also briefly discuss failure analysis techniques and future VCSEL reliability challenges. #

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“…During the last part of the aging process, the defects reach the active layers causing not only an enhanced optical degradation but also a second variation of the series resistance. This degradation mode is remarkably new, since most of the past reports on the degradation of oxide-confined VCSELs blamed the presence of extended defects (such as dark line defects) and/or cracks, mostly coming from the oxide layers, as the root cause of the poor device lifetime observed [17], [18], [19]. These defects are supposed to be already present in the semiconductor material after device growth, worsening the radiative efficiency or acting as preferential sites for the formation of additional defects.…”

Section: Introductionmentioning

confidence: 99%

Modeling the Electrical Degradation of Micro-transfer-Printed 845 nm VCSILs for Silicon Photonics

Zenari,

Buffolo,

De Santi

et al. 2024

IEEE Trans. Electron Devices

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This article deals for the first time with the electrical degradation of novel 845 nm vertical-cavity silicon-integrated lasers (VCSILs) for silicon photonics (SiPh). We analyzed the reliability of these devices by submitting them to high current stress. The experimental results showed that stress induced: 1) a significant increase in the series resistance, occurring in two separated time-windows and 2) a lowering of the turn-on voltage. To understand the origin of such degradation phenomena, we simulated the I-V characteristics and the band diagrams by a Poisson-drift-diffusion simulator. We demonstrated that the degradation was caused by the diffusion of mobile species capable of compensating the p-type doping. The diffusing species are expected to migrate from the p-contact region in the top distributed Bragg reflector (DBR) towards the active layers.

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Design for Reliability and Common Failure Mechanisms in Vertical Cavity Surface Emitting Lasers

Cited by 7 publications

References 11 publications

Dynamic Modeling of Stress-Induced Defect Expansion in VCSELs

Dynamic Modeling of Stress-Induced Defect Expansion in VCSELs

Reliability of Vertical-Cavity Surface-Emitting Lasers

Modeling the Electrical Degradation of Micro-transfer-Printed 845 nm VCSILs for Silicon Photonics

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