Design Guideline of Multi-Gate MOSFETs With Substrate-Bias Control

Nagumo, T.; Hiramoto, Toshiro

doi:10.1109/ted.2006.885533

Cited by 33 publications

(7 citation statements)

References 19 publications

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“…As already reported in [1], both the increase of W Si and the decrease of H Si are useful to augment the body factor, which is defined as Fig. 4 depicts the body factor as a function of the channel width and height.…”

Section: A Electrostatic Resultsmentioning

confidence: 94%

Influence of the back-gate bias on the electron mobility of trigate MOSFETs

Ruiz

Marín

Tienda-Luna

et al. 2013

2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

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The influence of the back-gate bias on the threshold voltage and on the electron mobility of silicon trigate devices over ultra-thin-box is studied. The analysis confirms the possibility of achieving body factors higher than γ=0.1 as long as the channel width over height ratio is increased as much as possible. Also, the strong impact of the back-gate bias on the electron mobility is demonstrated using state-of-the-art scattering models for 2D confined devices.

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Section: A Electrostatic Resultsmentioning

confidence: 94%

Influence of the back-gate bias on the electron mobility of trigate MOSFETs

Ruiz

Marín

Tienda-Luna

et al. 2013

2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

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“…27,28) The slight Vth peak shift towards the STI edge can be explained from this phenomenon for both jellium and discrete doping simulation results. However, two current peaks are symmetrical in the jellium case while in the outlier sample, the current peak only locates on one (the right)…”

Section: Introductionmentioning

confidence: 77%

Channel doping concentration and cell program state dependence on random telegraph noise spatial and statistical distribution in 30 nm NAND flash memory

Toshihiro¹,

Miyaji²

2015

Jpn. J. Appl. Phys.

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The dependence of spatial and statistical distribution of random telegraph noise (RTN) in a 30 nm NAND flash memory on channel doping concentration NA and cell program state Vth is comprehensively investigated using three-dimensional Monte Carlo device simulation considering random dopant fluctuation (RDF). It is found that single trap RTN amplitude Vth is larger at the center of the channel region in the NAND flash memory, which is closer to the jellium (uniform) doping results since NA is relatively low to suppress junction leakage current. In addition, Vth peak at the center of the channel decreases in the higher Vth state due to the current concentration at the shallow trench isolation (STI) edges induced by the high vertical electrical field through the fringing capacitance between the channel and control gate. In such cases, Vth distribution slope  cannot be determined by only considering RDF and single trap.

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“…A potential solution is the back-gate biasing that modifies V th due to the body effectively. However, few works deal with this effect on multi-gate MOSFETs [36,37].…”

Section: Misim Structure: Dual Gate Capacitormentioning

confidence: 99%

Electrical characteristics of metal–insulator–semiconductor and metal–insulator–semiconductor–insulator–metal capacitors under different high-k gate dielectrics investigated in the semi-classical and quantum mechanical models

2017

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In this paper the electrical characteristics of metal-insulator-semiconductor (MIS) and metalinsulator-semiconductor-insulator-metal (MISIM) capacitors with (100)-oriented p-type silicon as a substrate under different high-k gate dielectrics (SiO 2 , HfO 2 , La 2 O 3 and TiO 2) are investigated in the semi-classical and quantum mechanical models. We review the quantum correction in the inversion layer charge density for p-doped structures. The purpose of this paper is to point out the differences between the semi-classical and quantum mechanical charge descriptions at the insulator-semiconductor interface and the effect of the type of oxide and their position (gate oxide or buried oxide) in our structures. In particular, capacitance-voltage (C-V), relative position of the sub-band energies and their wavefunctions are studied to examine qualitatively and quantitatively the electron states and charging mechanisms in our devices. We find that parameters such as threshold voltage and device trans-conductance are enormously sensitive to the proper treatment of quantization effects.

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Design Guideline of Multi-Gate MOSFETs With Substrate-Bias Control

Cited by 33 publications

References 19 publications

Influence of the back-gate bias on the electron mobility of trigate MOSFETs

Influence of the back-gate bias on the electron mobility of trigate MOSFETs

Channel doping concentration and cell program state dependence on random telegraph noise spatial and statistical distribution in 30 nm NAND flash memory

Electrical characteristics of metal–insulator–semiconductor and metal–insulator–semiconductor–insulator–metal capacitors under different high-k gate dielectrics investigated in the semi-classical and quantum mechanical models

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