Design methodology for CMOS distributed amplifiers

Green, M.M.; Pisani, M. B.; Dehollain, Catherine

doi:10.1109/iscas.2008.4541521

Cited by 6 publications

(12 citation statements)

References 5 publications

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“…The structures presented are compact and provide better isolation with only few numbers of structures loading the microstrip line unlike some other configurations of band-stop filter designs. Distributed amplifiers (DAs) have been used widely for realizing the broadband amplifiers because they achieve the advantages of flat gain response, good return losses, simply structure, and ease of design [1][2][3][4]. However, regarding to a broadband amplifier with a specific bandwidth, DA cannot satisfy the bandwidth requirement due to its inborn low-pass property.…”

Section: Discussionmentioning

confidence: 99%

“…Optical fiber sensor based rosettes have been developed as alternative to the electrical SGs rosettes [1][2][3][4][5][6][7]. Two types of optical fiber sensors have been successfully used: the Fabry-Pérot [1][2][3] interferometer and the FBG [4][5][6][7].…”

Section: Introductionmentioning

confidence: 99%

“…Two types of optical fiber sensors have been successfully used: the Fabry-Pérot [1][2][3] interferometer and the FBG [4][5][6][7]. Valis et al [1] developed a rosette based on intrinsic Fabry-Pérot interferometers.…”

Section: Introductionmentioning

confidence: 99%

“…They achieved performance comparable with an electrical strain rosette when optical fiber sensors are glued at the surface of the structure. If directly embedded in unidirectional laminates (graphite/PEEK) subjected to uniaxial stress applied along the central rosette arm direction [2], they observed a satisfying behavior of their sensors. Case et al [3] chose the extrinsic Fabry-Pérot interferometers configuration.…”

Section: Introductionmentioning

confidence: 99%

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A band selected 3.1–30.1 GHz distributed amplifier in 0.18‐μm CMOS technology

Feng

Wei

Hsu

et al. 2011

Micro & Optical Tech Letters

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A band-selected 3.1-30.1 GHz CMOS distributed amplifier (DA) for extended UWB application is presented in this article. The proposed circuit was designed and fabricated with a 0.18lm CMOS technology. This circuit uses a sharpening technique to improve the frequency response from low-pass to bandpass property, for the requirement of limited frequency band. This DA also adopts the inductive peaking technique to increase circuit's gain and bandwidth. This DA has a measured maximum power gain of 7.5 dB. The supply voltage and biasing current are 1.8 V and 28.6 mA, with total DC power of 51.48 mW. When compared with the standard DAs published over the past years, this circuit offers good abilities in band selectivity, acceptable power gain, low noise figures, and large-signal performances.

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Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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A band selected 3.1–30.1 GHz distributed amplifier in 0.18‐μm CMOS technology

Feng

Wei

Hsu

et al. 2011

Micro & Optical Tech Letters

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“…Due to cost and integration considerations CMOS offers a higher level of integration at a lower cost compared with other high-speed semiconductor technologies such as GaAs and SiGe. Distributed amplification is considered as a major technique for broadband PAs and with the scaling of CMOS process the achievable unity power gain frequency f t is tops 100 GHz and allows one to design microwave or millimeter wave amplifiers [53]. The theoretical maximum PAE of the conventional TWA can be expressed as…”

Section: Traveling Wave Rf Pa (Twa)mentioning

confidence: 99%

A Review of Advanced CMOS RF Power Amplifier Architecture Trends for Low Power 5G Wireless Networks

Vasjanov

Barzdėnas

2018

Electronics

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The structure of the modern wireless network evolves rapidly and maturing 4G networks pave the way to next generation 5G communication. A tendency of shifting from traditional high-power tower-mounted base stations towards heterogeneous elements can be spotted, which is mainly caused by the increase of annual wireless users and devices connected to the network. The radio frequency (RF) power amplifier (PA) performance directly affects the efficiency of any transmitter, therefore, the emerging 5G cellular network requires new PA architectures with improved efficiency without sacrificing linearity. A review of the most promising reported RF PA architectures is presented in this article, emphasizing advantages, disadvantages and concluding with a quantitative comparison. The main scope of reviewed papers are PAs implemented in scalable complementary metal–oxide–semiconductor (CMOS) and SiGe BiCMOS processes with output powers suitable for portable wireless devices under 32 dBm (1.5 W) in the low- and high- 5G network frequency ranges.

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