Design of 1×8 silicon nanowire arrayed waveguide grating for on-chip arrayed waveguide grating demodulation integration microsystem

Li, Hongqiang; Li, Enbang; Liu, Zhihui; Wei, Kejia; Dong, Xiaopeng; Bai, Yaoting

doi:10.1117/1.oe.51.12.123001

Cited by 14 publications

(10 citation statements)

References 8 publications

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“…However, the AWG design results in values comparable with those produced by existing practical devices that have different channel spacing but are fabricated using the same material (SOI). 13,17,18 The lowest IL, with a higher adjacent XT, was obtained for an AWG design with a top Si layer thickness of 1.0 μm and a core width of 1.2 μm. The complete transmission spectrum of an 18-channel AWG is shown in Fig.…”

Section: Optimization Of Awg Design Layoutmentioning

confidence: 99%

Optimal design of linear tapered double S-shaped arrayed waveguide grating for broad channel spacing on silicon-on-insulator

Juhari¹,

Menon²,

Ehsan³

et al. 2014

Opt. Eng

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A linear tapered double S-shaped arrayed waveguide grating (AWG) was designed as an alternative to a U-shaped AWG, and a complete transmission spectrum for 18 channels of coarse wavelength-division multiplexing (CWDM) was demonstrated. The silicon-on-insulator based AWG with a rib waveguide structure with a broad channel spacing of 20 nm was designed to serve as a multiplexer/demultiplexer. A beam propagation method modeling simulation under transverse electric mode polarization over a free spectrum range of 700 nm was used for the design process. The geometrical dimensions of the AWG rib structure were optimized to achieve the lowest reported insertion loss of 1.07 dB and adjacent crosstalk of −38.83 dB. The influence of different etching depths on the top Si layer of the AWG for a constant core width of 0.6 μm as well as birefringence effects were also investigated. A transmission spectrum response at the output port close to the standard CWDM wavelength grid range of 1271 to 1611 nm with an average channel spacing of 2485 GHz was obtained. IntroductionSilicon-on-insulator (SOI) has become a popular choice of material in recent years because of its potential for use in the photonics components manufacturing industry, which uses a monolithic or hybrid integration assembly. Arrayed waveguide gratings (AWG)-based silicon waveguide structures functioning as multiplexers/demultiplexers (mux/ demux) are being widely employed in wavelength-division multiplexing (WDM) systems. There are several advantages in using SOI as a platform for photonics integration, such as low manufacturing costs due to the use of existing complementary metal oxide semiconductor fabrication technology, 1 compact devices, and high confinement of the optical mode. 2 Further, silicon has a high index contrast (Δn) and is transparent at infrared wavelengths, making it suitable for optical communication applications. By using these features of SOI materials, we designed and analyzed an SOI-based AWG mux/demux capable of splitting or combining the multiple signals in a single fiber utilized in coarse wavelength-division multiplexing (CWDM) systems.In this work, we optimized the geometrical rib waveguide structure and characterized the ideal parameters of a linear tapered double S-shaped AWG on an SOI platform to mitigate insertion loss (IL) and adjacent crosstalk (XT) in an 18-channel CWDM device with a channel spacing of 20 nm. The investigations were carried out by selecting the dimensions of the rib waveguide, which allows a single-mode condition where the ratio of the slab height (h) to the thickness of the top silicon (Si) guiding layer (H) or h∕H was in the range

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Section: Optimization Of Awg Design Layoutmentioning

confidence: 99%

Optimal design of linear tapered double S-shaped arrayed waveguide grating for broad channel spacing on silicon-on-insulator

Juhari¹,

Menon²,

Ehsan³

et al. 2014

Opt. Eng

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“…The miniaturization design of this type of light source for VCSEL has met the on-chip system requirements. The light source shows superior performance and functions on the on-chip arrayed waveguide grating demodulation integration microsystem [1], which has been investigated by our research group. In 2008, Chung et al successfully implemented the sub-wavelength grating-mirror VCSEL with a thin oxide gap at 981 nm [2].…”

Section: Introductionmentioning

confidence: 99%

Integration of 1550nm vertical-cavity surface-emitting laser with gratings on SOI

Cui

Zhang

et al. 2014

Optics & Laser Technology

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“…The results of our previous works on the array waveguide grating (AWG) demodulation system, which is a new kind of optical fiber grating demodulation scheme, show its suitability for optoelectronic integration. 2 The system consists of an on-chip light source, multimode interface coupler, 3 FBG array, 1 × 8 AWG, 4 output grating couplers (GCs), and InP/InGaAs photodetector array as shown in Fig. 1(a).…”

Section: Introductionmentioning

confidence: 99%

High-performance binary blazed grating coupler used in silicon-based hybrid photodetector integration

Liu

Miao

et al. 2014

Opt. Eng

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(2014). High-performance binary blazed grating coupler used in silicon-based hybrid photodetector integration. Optical Engineering, 53 (9), 097106-1-097106-6.High-performance binary blazed grating coupler used in silicon-based hybrid photodetector integration AbstractAn efficient and high-performance binary blazed grating coupler was designed based on silicon-on-insulator (SOI) used for silicon-based hybrid photodetector integration in an arrayed waveguide grating demodulation integrated microsystem. A relatively high coupling efficiency was obtained to optimize mode matching by the finite-difference time-domain method by choosing appropriate grating parameters, including period, etching depth, and fill factor. Coupling efficiency output at 1550 nm for the TE mode reached 68%. This value was >60% in the wavelength range of 1450 to 1600 nm, specifically 71.4% around 1478 nm. An InP/InGaAs photodetector and SOI wafer were integrated by using benzocyclobutene (BCB) bonding. When the thickness of the BCB bonding layer was 440 nm, power absorption efficiency at 1550 nm for the TE mode reached 78.5%, whereas efficiency reached similar to 81.8% around 1475 nm. Abstract. An efficient and high-performance binary blazed grating coupler was designed based on silicon-oninsulator (SOI) used for silicon-based hybrid photodetector integration in an arrayed waveguide grating demodulation integrated microsystem. A relatively high coupling efficiency was obtained to optimize mode matching by the finite-difference time-domain method by choosing appropriate grating parameters, including period, etching depth, and fill factor. Coupling efficiency output at 1550 nm for the TE mode reached 68%. This value was >60% in the wavelength range of 1450 to 1600 nm, specifically 71.4% around 1478 nm. An InP/InGaAs photodetector and SOI wafer were integrated by using benzocyclobutene (BCB) bonding. When the thickness of the BCB bonding layer was 440 nm, power absorption efficiency at 1550 nm for the TE mode reached 78.5%, whereas efficiency reached ∼81.8% around 1475 nm. Disciplines Engineering | Science and Technology Studies IntroductionPhotonic integrated circuits allow the implementation of multiple optical functions on a single substrate, thereby reducing the cost and size of photonic systems. These features have attracted much attention in the last decades, facilitating the development of photonic integrated circuits for telecommunication applications. Si-based optoelectronic circuits 1 have attracted increasing attention because of their compact volumes and because of the high refractive index contrast of these waveguides. The large footprint and high price of the fiber Bragg grating (FBG) demodulation systems limit the promotion and application of optical FBG sensing technology. The results of our previous works on the array waveguide grating (AWG) demodulation system, which is a new kind of optical fiber grating demodulation scheme, show its suitability for optoelectronic integration.2 The system consists of an on-chip light source, ...

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Design of 1×8 silicon nanowire arrayed waveguide grating for on-chip arrayed waveguide grating demodulation integration microsystem

Cited by 14 publications

References 8 publications

Optimal design of linear tapered double S-shaped arrayed waveguide grating for broad channel spacing on silicon-on-insulator

Optimal design of linear tapered double S-shaped arrayed waveguide grating for broad channel spacing on silicon-on-insulator

Integration of 1550nm vertical-cavity surface-emitting laser with gratings on SOI

High-performance binary blazed grating coupler used in silicon-based hybrid photodetector integration

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