The NF remains less than 4.6 dB when V ctrl is lower than 1.8 V. The minimum NF of 3.7 dB is obtained with V ctrl 5 0 V at 9.2 GHz. Finally, Table 2 summarizes previously reported CMOS VGAs for comparison. Compared to other advanced CMOS technologies, this work demonstrates the lowest average NF, high peak gain while maintains good gain control range with low power consumption.
CONCLUSIONIn this letter, a novel X-band low-noise amplifier (LNA) with variable gain was designed, implemented, and verified in a standard 0.18-lm CMOS. The first stage of the LNA is a CS amplifier for noise reduction, and the second stage is a cascode amplifier which incorporates a reflection-type attenuator and a parallel inductor for gain enhancement and variation. The design concept and principle are also detailed. Based on this topology, the attenuator provides 9.3 dB of gain variation with good return losses, and the NF of the LNA ranges between 3.7 and 4.6 dB in all modes. Good agreement between the simulated and measured results establishes the practicality and usefulness of the design methodology, and the VGA reveals great potentials for system-on-chip integrations especially for X-band radar or other wireless communication applications.ABSTRACT: This article presents a design approach of a band-pass filter which is fabricated on an integrated passive device process and is capable of operating over the unlicensed 60-GHz band (57-64 GHz). The band-pass filter proposed in this article evolves from a typical one comprising two identical, mirrored open-loop half-wavelength microstrip line resonators. The experimental results demonstrate an insertion loss of less than 2.4 dB, a return loss of better than 10 dB over the 60-GHz band, and a 3-dB bandwidth of 24 GHz ($42%). The simulation and measurement results are well matched up to 110 GHz. This filter is suited for system-in-a-package V-band front-end systems.