“…However, further improvement in the energy efficiency of Si-based power devices through device design and manufacture is a challenge due to the theoretical limits of the material [1][2][3]. Wide band gap materials such as diamond, Ga 2 O 3 , and GaN have been used in recent years for the design and fabrication of power devices because their excellent physical properties meet the growing efficiency requirements [4][5][6][7][8][9]. Diamond possesses an ultrawideband gap, high thermal conductivity, and high electric field, high carrier mobility [10][11][12], making it the most suitable material for high-power, high-temperature, high-voltage, and high-frequency power electronics applications [13][14][15].…”