2022
DOI: 10.1149/2162-8777/ac66fd
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Design of a 6 kV Beta-Ga2O3 PN Heterojunction Diode with Etched Double-Layered NiO with a Figure of Merit of 10 GW cm−2

Abstract: This study proposes a NiO/β-Ga2O3 etched heterojunction extension termination design for NiO/β-Ga2O3 PN diode to fulfill the application of 6 kV high-voltage with a considerably outstanding power figure of merit 10 GW/cm2, validated and optimized by sentaurus TCAD software. The results indicated the optimum termination parameters L=20mm and DJET=2.3×1013cm-2 for the single junction termination extension structure with 4000V breakdown voltage, and L1=L2=20mm, DJET1=4×1013cm-2 and DJET2=2.3×1013cm-2 for the doub… Show more

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Cited by 5 publications
(4 citation statements)
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“…The simulations conducted in this study assume that the operating voltage for the SBD is around 500 V. Careful device engineering would be needed for structures with different epi-doping and optimization for design parameters would be required. Recently, there have been multiple studies 30,31 on the addition of a p-NiO layer under the Schottky contact. The p-type layer creates an additional pn junction which helps with the potential drop, opening an innovative path to further improve the device performance.…”
Section: Resultsmentioning
confidence: 99%
“…The simulations conducted in this study assume that the operating voltage for the SBD is around 500 V. Careful device engineering would be needed for structures with different epi-doping and optimization for design parameters would be required. Recently, there have been multiple studies 30,31 on the addition of a p-NiO layer under the Schottky contact. The p-type layer creates an additional pn junction which helps with the potential drop, opening an innovative path to further improve the device performance.…”
Section: Resultsmentioning
confidence: 99%
“…It is generally accepted, however, that useful levels of majority shallow acceptor (p-type) doping in β-Ga2O3 are unlikely to be achieved because of a combination of factors, including the relatively low absolute energy level of the valence band, the lack of an identified shallow acceptor, the relatively high effective masses of holes at the top of the valence band, the propensity for the self-trapping of holes and the relatively low formation energy of the oxygen vacancy background donor (that compensates acceptors) [15][16][17]. p-n heterojunction diodes have been realized, however, by combining n-type Ga2O3 with p-type semiconductors such as Cu2O [18], SnO2 [19] or NiO [20][21][22][23][24]. The marrying of n-type Ga2O3 with these p-type oxides has been explored because p-n junction architectures have many advantages including the possibility of self-powered (photovoltaic effect) operation in UVC photodetectors and reduced Ron and superior Vbr and operating temperature capabilities in power electronics.…”
Section: Introductionmentioning
confidence: 99%
“…However, further improvement in the energy efficiency of Si-based power devices through device design and manufacture is a challenge due to the theoretical limits of the material [1][2][3]. Wide band gap materials such as diamond, Ga 2 O 3 , and GaN have been used in recent years for the design and fabrication of power devices because their excellent physical properties meet the growing efficiency requirements [4][5][6][7][8][9]. Diamond possesses an ultrawideband gap, high thermal conductivity, and high electric field, high carrier mobility [10][11][12], making it the most suitable material for high-power, high-temperature, high-voltage, and high-frequency power electronics applications [13][14][15].…”
Section: Introductionmentioning
confidence: 99%