Design of a Broadband MMIC Driver Amplifier with Enhanced Feedback and Temperature Compensation Technique

Zhang, Shengli; Wan, Jing; Zhao, Jianhui; Yang, Zhe; Yan, Yuepeng; Liang, Xianling

doi:10.3390/electronics11030498

Cited by 5 publications

(6 citation statements)

References 25 publications

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“…An analytical approach to filter synthesis allows the construction of MNs with specified bandwidths and suitable passband types depending on the load composition; moreover, complete closed-form solutions can be obtained for simple loads such as RC, RL, or RLC [6][7][8][9][10], making them more flexible and easier to apply compared to the computationally intensive SRFT. As for the device level, negative feedback and reactive/resistive matching effectively alleviate the gain roll-off characteristics of transistors, which offer considerable advantages in terms of cost, space, and complexity [11][12][13][14]. From another perspective, reducing the impedance transformation ratio (ITR) of MN is also a valid way to extend the bandwidth.…”

Section: Introductionmentioning

confidence: 99%

Design of an Efficient 24–30 GHz GaN MMIC Power Amplifier Using Filter-Based Matching Networks

et al. 2022

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A broadband GaN MMIC power amplifier (PA) with compact dimensions of 1.94 × 0.83 mm2 is presented for 5G millimeter-wave communication. To guarantee output capability at the operating band edges where serious performance degradation is likely to occur, the appropriate large-signal matching model and optimal impedance domain need to be carefully determined through load-pull analysis. Broadband matching networks (MNs) in the lowpass form are thereafter developed based on the Chebyshev filter synthesis theory. Using high-pass interstage MN in conjunction with parallel RC lossy circuits to compensate for the transistor’s negative gain roll-off slope ensures a flat frequency response. The input MN is designed as a band-pass filter due to the reactance extracted from the input side of the stabilized device exhibiting series LC resonance characteristics. Measured on-wafer pulsed results for the proposed three-stage PA demonstrate up to 30.9 dBm of output power, more than 28.6 dB of small-signal gain, and a peak power-added efficiency (PAE) of 35.6% at 27 GHz. Both uniform gain and saturated output power (Psat) are achieved across 24–30 GHz with fluctuations of less than 0.8 dB.

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Section: Introductionmentioning

confidence: 99%

Design of an Efficient 24–30 GHz GaN MMIC Power Amplifier Using Filter-Based Matching Networks

et al. 2022

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“…However, these indicators have a trade-off to each other, which brings challenges to the design of wideband LNAs. Technologies to achieve broad bandwidth with low noise simultaneously are extensively developed and studied [9][10][11][12][13][14]. In [9], a bandwidth-enhanced Darlington amplifier with shunt feedback is adopted to implement a broadband amplifier with flat gain.…”

Section: Introductionmentioning

confidence: 99%

“…In [9], a bandwidth-enhanced Darlington amplifier with shunt feedback is adopted to implement a broadband amplifier with flat gain. However, tensively developed and studied [9][10][11][12][13][14]. In [9], a bandwidth-enhanced Darlington amplifier with shunt feedback is adopted to implement a broadband amplifier with flat gain.…”

Section: Introductionmentioning

confidence: 99%

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Analysis and Design of a Wideband Low-Noise Amplifier with Bias and Parasitic Parameters Derived Wide Bandpass Matching Networks

Zhao

Wang

et al. 2022

Electronics

Self Cite

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This paper proposes a 110% relative bandwidth (RBW) low-noise amplifier (LNA) for broadband receivers with flat gain, low noise and high linearity. Bias and parasitic parameters derived wide bandpass (BPDWB) matching networks and a cascode with dual feedbacks are introduced for broadband performance. Matching network design procedures are demonstrated, and results show that the frequency response of the network fits the target impedance well from 1 GHz to 3.5 GHz. The proposed BPDWB network improves the design efficiency and enhances the prediction accuracy of impedance matching. The proposed LNA in 0.25 μm GaAs pseudomorphic high electron mobility transistor (GaAs pHEMT) technology realizes a minimum NF of 0.45 dB at 1.6 GHz where the NF is less than 0.55 dB within the operating frequency band. A flat gain of 22.5–25.2 dB is achieved with the input voltage standing wave ratio (VSWR) below 1.22 and output VSWR less than 2.5. In addition, the proposed LNA has good linearity where the output third-order intercept point (OIP3) is better than +31.5 dBm, and the output 1 dB compression point (OP1dB) is better than +19 dBm over the wide frequency range.

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“…The high-rate broadband communication systems need to use wideband amplifiers as critical building blocks. One of the most common alternatives for broadband amplification applications app ears to be the distributed amplifier [5]. The high gain-bandwidth product and outstanding linearity, like distributed amplifiers (DA), make them a great choice for highly wideband amplification applications [6].…”

Section: Introductionmentioning

confidence: 99%

Improved Design for the High Gain Wideband Matrix Amplifiers Using Differential Cells and Microwave CMOS Technology

Ridha¹,

Kareem²,

Hameed³

2022

ETJ

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 The M atrix Amplifier is a structure designed to increase the gain of the wideband distributed amplifiers.  A promising method for the deployment of high-speed optical systems with completely integrated transceivers by utilizing CM OSdistributed amplifiers with bandwidths of gigahertz to a few tens of gigahertz  The stable gain and excellent terminal match across a wide frequency range are the key reasons for the increased usage of distributed amplifiers.  The solution to the gain bandwidth roll-off problem is in this paper.  Decreasing the roll-off problem in which the values of the gain and BW are approximately balanced (High gain and high bandwidth).The M atrix Amplifier is a structure designed to increase the gain of the wideband distributed amplifiers. A matrix amplifier is used to improve the pass-band gain while preserving the dispersed design-wide characteristics to use the multiplicative gain mechanism. In this paper, the matrix distributed amplifier methodology is developed using differential cells instead of active amplifier cells to improve the wideband characteristics. Shunt capacitances are connected in the centerline to absorb the peaking impact at a cut-off frequency and reduce gain ripples. As an application of the ideas and concepts of matrix amplifiers, a modified step -by-step design of rows 4 and column 2 matrix amplifier is undertaken using a Quasi Differential amplifier. A M atrix differential amplifier using a shifted-second-tier structure technique is then built and tested in 0.18 µm Complementary M etal Oxide Semiconductors technology. The advantages gained from the proposed design are high gain, high bandwidth, low noise, and no need for balun circuits.The design and simulation results were achieved using ADS. The significant results show a high gain of 40 dB and a 33 GHz bandwidth. The noise figure is also 3.583, with S11, S22, and S12 being -10 dB, -10dB, and -40dB, respectively; the output power at 1-dB gain compression point is evaluated (P1dB) of +6.4 dBm, and the total DC power dissipation is 266mW. The cadence tools produced the layout design and specifications, although the chip size was 1.1mm 2 .

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Design of a Broadband MMIC Driver Amplifier with Enhanced Feedback and Temperature Compensation Technique

Cited by 5 publications

References 25 publications

Design of an Efficient 24–30 GHz GaN MMIC Power Amplifier Using Filter-Based Matching Networks

Design of an Efficient 24–30 GHz GaN MMIC Power Amplifier Using Filter-Based Matching Networks

Analysis and Design of a Wideband Low-Noise Amplifier with Bias and Parasitic Parameters Derived Wide Bandpass Matching Networks

Improved Design for the High Gain Wideband Matrix Amplifiers Using Differential Cells and Microwave CMOS Technology

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