This paper describes the Micro-for-Nano (M4N) approach as effective solution to overcome challenges related to the nanomaterial assembly with electrodes, the low-noise measurement of nanomaterial electrical properties and the CMOS design of the nanosensor electronic interface. This paper presents both the fabrication process of a nanodevice onto the IC surface using Dielectrophoresis (DEP) and the ReadOut Circuit (ROC) used for the inspection of the electrical properties of nanowires (NW). The ROC includes a Time-overThreshold circuit which has been characterized stand-alone. It shows maximum measurement error of 0.8% with a maximum linearity error below 1.86% in the range 300 kΩ-100 MΩ. The ROC occupies 0.0067 mm 2 silicon area and simulation data shows that the maximum power consumption is 8.9 µW at 1.2 V. The paper presents first measurement results obtained on fabricated prototype chips based on ZnO-NW.