Design of a GaN-based microinverter for photovoltaic systems

Garcia-Rodriguez, Luciano A.; Jones, Vinson; Balda, Juan Carlos; Lindstrom, Esteban O.; Oliva, Alejandro; González-Llorente, Jesús

doi:10.1109/pedg.2014.6878639

Cited by 12 publications

(11 citation statements)

References 12 publications

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“…With lower switching and conducting losses, efficiency of the power electronics can be increased. The lower losses due to the semiconductor device allow utilization of smaller and cheaper heat dissipation components [10]. The reliability of the system will also improve as the stress on the components due to temperature is reduced [10].…”

Section: Introductionmentioning

confidence: 99%

“…The lower losses due to the semiconductor device allow utilization of smaller and cheaper heat dissipation components [10]. The reliability of the system will also improve as the stress on the components due to temperature is reduced [10]. Finally, the lower gate charge of GaN HFETs allows higher frequency operation, resulting in smaller passive filter components and increased power density.…”

Section: Introductionmentioning

confidence: 99%

“…For example, a DC/AC inverter has been realised for photovoltaic applications [10] and motor driver applications [11] [12]. GaN based DC/DC converters have been seen in high frequency switching resonant converters [13] and lower power converters [14].…”

Section: Introductionmentioning

confidence: 99%

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A high frequency, high efficiency GaN HFET based inductive power transfer system

Cai

Pereira

Tanzania

et al. 2015

2015 IEEE Applied Power Electronics Conference and Exposition (APEC)

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This paper aims to develop an Inductive Power Transfer (IPT) system targeting at Electric Vehicles (EV) and Hybrid Electric Vehicles (HEV). IPT systems provide significant benefits over conventional plug-in chargers. However, in order for IPT to be adopted for EV charging, efficiency is a key Figure of Merit (FOM) which needs to be achieved. This paper develops an inverter using Gallium Nitride (GaN) power transistors which have the benefit of low on-resistance and gate charge to reduce the switching and conduction loss. A design methodology for optimising the switching performance of the power transistor is developed in order to minimise switching loss while keeping overshoot under control. An efficiency centric control method is proposed to improve the efficiency of the system, while ensuring sufficient power transfer. The evaluation results show that a GaN based system is capable of outperforming a SiC based system. At a gap of 150mm, the system obtains above 90% efficiency at 1.3 kW. The system efficiency peaks at 95% at 100 kHz operation and 92% at 250 kHz operation at a distance of 80mm for 2kW output power.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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A high frequency, high efficiency GaN HFET based inductive power transfer system

Cai

Pereira

Tanzania

et al. 2015

2015 IEEE Applied Power Electronics Conference and Exposition (APEC)

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“…With lower switching and conducting losses, efficiency of the power electronics can be increased. The lower losses in the semiconductor device allow utilization of smaller and cheaper heat dissipation components [13].…”

Section: Motivationmentioning

confidence: 99%

“…The reliability of the system will improve as temperature related stress is reduced [13]. Finally, the lower gate charge of GaN GIT allows higher frequency operation, resulting in smaller passive filter components and increased power density.…”

Section: Motivationmentioning

confidence: 99%

Innovative application and driving of enhancement mode gallium nitride power transistors

Cai¹

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Wide-bandgap semiconductors like Gallium Nitride (GaN) are enabling higher efficiency and greater power density in power electronics. The objective of this work is to develop novel gate drive methods and applications for the proliferation of Enhancement mode (E-mode) GaN power transistors. The challenges of driving enhancement mode GaN devices are identified. Gate drive study is conducted to review the advantages and limitations of various gate drive methods. A 2-stage gate drive is introduced to allow a capacitor-less type gate drive to meet the requirements of the GaN GIT. This is further improved by proposing a 2-stage, 2-phase gate driver to reduce the gate ringing. Simulation is conducted to verify the design and the proposed design demonstrates reduction in gate ringing. A GaN GIT gate driver IC is evaluated against the R-type and RC-type gate driver to demonstrate driving the GaN Gate Injection Transistor (GIT) at high slew rates (~150 V/ns) while having built-in active Miller clamp and self-generated negative voltage rail for cross-conduction protection. This research investigated the application of GaN GIT in Inductive Power Transfer (IPT) for Electric Vehicles (EV). IPT systems provide significant benefits over conventional plug-in chargers. A high frequency inverter using GaN GIT, which have low on-resistance and gate charge, is implemented to

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Multiwafer Process: Wafer Selection and Wafer Cleaning

Thoutam,

Song

2024

Handbook of Emerging Materials for Semiconductor Industry

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Design of a GaN-based microinverter for photovoltaic systems

Cited by 12 publications

References 12 publications

A high frequency, high efficiency GaN HFET based inductive power transfer system

A high frequency, high efficiency GaN HFET based inductive power transfer system

Innovative application and driving of enhancement mode gallium nitride power transistors

Multiwafer Process: Wafer Selection and Wafer Cleaning

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