Design of a high efficiency ultrathin CdTe/CdS p-i-n solar cell with optimized thickness and doping density of different layers

Hossain, M. Mofazzal; Karim, Md. Minhaz Ul; Banik, Sowrabh; Jahan, Nusrat; Matin, Mohammad A.

doi:10.1109/icaees.2016.7888058

Cited by 2 publications

(3 citation statements)

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“…The same structure with Si as BSF layer achieved an open-circuit voltage of 1.06 V, a short-circuit current density of 26.66 mA/cm 2 , and a fill factor of 87%, and the corresponding overall conversion efficiency of 24.51%. Compared to our previous work [1] the cell thickness is reduced by 30% with a sacrifice of 0.73% cell efficiency.…”

Section: Discussioncontrasting

confidence: 58%

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A High Efficiency Ultra Thin (1.8 um) CdS/CdTe p-i-n Solar Cell with CdTe and Si as BSF layer

Jahan¹,

Karim²,

Hossain³

2018

Adv. sci. technol. eng. syst. j.

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CdTe-based photovoltaic (PV) cells provide the lowest EBPT (energy payback time) and emit less amount of GHG (green house gases) among different types of PV cells. Thus, it is very essential to enhance the efficiency of CdTe-based solar cells. A high efficiency CdTe/CdS p-in heterostructure solar cell is designed and the performance of the cell is investigated. All the simulations have been done using AMPS 1D (Analysis of Microelectronic and Photonic Structures) simulator. The cell consists of a transparent conducting oxide (TCO) layer (ZnO), a window layer (n-type CdS), an intrinsic layer (CdTe), an absorber layer (p-type CdTe) and a highly doped CdTe and Si as back surface field (BSF) layer. After the optimization of layer thicknesses and doping densities of different layers, we obtained a conversion efficiency of 26.01% for a total cell thickness of 1.8 m. It is also found that the conversion efficiency can be increased by simply increasing the thickness of intrinsic layer. At 1.5 AM solar irradiance, the proposed cell structure attained a V oc of 1.09 V, a J sc of 26.78 mA/cm 2 , and a fill factor of 89%, reaching an overall conversion efficiency of 26.01% with CdTe as BSF layer.

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Section: Discussioncontrasting

confidence: 58%

“…This paper is an extension of our previous work presented in ICAEESE 2016 [1]. The rapidly rising demand of world energy supply and the depletion of fossil fuel impose crucial challenges concerning today's energy requirement context.…”

Section: Introductionmentioning

confidence: 82%

A High Efficiency Ultra Thin (1.8 um) CdS/CdTe p-i-n Solar Cell with CdTe and Si as BSF layer

Jahan¹,

Karim²,

Hossain³

2018

Adv. sci. technol. eng. syst. j.

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“…Literature survey [24] shows that in the amorphous silicon (a-Si) PV cells, the highest performance was realized by introducing the p-i-n structure. M. Hossain [25] simulated a CdS/CdTe solar cell with i-CdTe layer that improved efficiency to 26.74%. These successes mean the efforts to improve further device performance, and have shifted towards surface physical phenomena, mainly the passivation of surfaces and interfaces.…”

Section: Introductionmentioning

confidence: 99%

Reduced Recombination Current Due to Sputtered CdO Nanolayer at CdS/CdTe Interface

Al-Qassem¹,

Fedorov²,

Gagara³

et al. 2023

MSA

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In this paper, interface engineering via sputtering of CdO nanolayer at the buffer-CdS/CdTe-absorber interface is demonstrated as an efficient approach to improve the performance of solar cell device. The i-CdO interfacial layer with various thicknesses from 5 nm to 35 nm was deposited by DC magnetron sputtering. Comparative studies on TCO/CdS/CdTe and TCO/CdS/CdO/CdTe interfaces have been conducted by current-voltage, capacitance-voltage and admittance spectroscopy measurements. The current-voltage characteristics of the devices with an area of 0.45 cm 2 under 100 mW/cm 2 illumination, at the optimum thickness of CdO intermediate layer in the proposed structures, show increases of the short circuit current density and the open circuit voltage by 5% and 25%, respectively. The efficiency improvement of 3.1% of p-i-n cell over p-n cell is observed. Results of the temperature-dependent current-voltage and admittance measurements revealed the removing of the deep level defect with the activation energy of 0.43 eV and the reducing of the ideality factor from 1.9 to 1.8 via buffer/absorber interfacial passivation method. Interface passivation appears to be critical to improve the short circuit current density and the open circuit voltage, and CdO thin film is clearly effective for this purpose.

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Design of a high efficiency ultrathin CdTe/CdS p-i-n solar cell with optimized thickness and doping density of different layers

Cited by 2 publications

References 12 publications

A High Efficiency Ultra Thin (1.8 um) CdS/CdTe p-i-n Solar Cell with CdTe and Si as BSF layer

A High Efficiency Ultra Thin (1.8 um) CdS/CdTe p-i-n Solar Cell with CdTe and Si as BSF layer

Reduced Recombination Current Due to Sputtered CdO Nanolayer at CdS/CdTe Interface

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