Design of a highly efficient FeS₂-based dual-heterojunction thin film solar cell

Theoretical insights into a high-efficiency Sb2Se3-based dual-heterojunction solar cell

“…sub-band gap photons are absorbed in a sequence by Urbach tail-states of materials which provide extra EHPs. A material with preferable band gap, doping concentration and high absorption coefficient in longer wavelength region could result TSA upconversion process ( Mostaque et al., 2022 ; Mondal et al., 2021 ; Hossain et al., 2021a , 2022 ). The detail qualitative discussion of the TSA upconversion process can be perceived in other work ( Mostaque et al., 2022 ).…”

Numerical prediction on the photovoltaic performance of CZTS‐based thin film solar cell

“…This is happened due to the WSe 2 BSF layer which is capable to absorb sub-band gap photons through tail-state-assisted (TSA) two-step photon upconversion process. [50,[52][53][54][55][56] This process declared that with the assistance of Urbach tail states, two sub-band gap photons get absorbed in a row. This kinds of upconversion may be occurred in the material with adequate doping, high absorption coefficient and preferable band gap.…”

“…This kinds of upconversion may be occurred in the material with adequate doping, high absorption coefficient and preferable band gap. [50,[52][53][54][55][56] As a result, the value of short circuit current shows the significant positive change due to WSe 2 layer which also performs the role of bottom absorber layer in n-ZnS/p-CZTS/p + -WSe 2 DH thin film solar cell. A detail qualitative explanation about the TSA upconversion process can be found in other work.…”

“…The enhancement of QE is the evidence of enhancement of longer wavelength photon absorption utilizing TSA photon upconversion process in the WSe 2 layer. [50,[52][53][54][55][56] That is why, due to the addition of WSe 2 layer in CZTS thin film solar cell, the shortcircuit current as well as efficiency have been increased tremendously.…”

“…In one side the TSA photon upconversion is responsible for the improvement of J SC and on the other side generation of higher built-in potential at the ZnS/CZTS and CZTS/WSe 2 interfaces is responsible for the increment of the value of V OC . [50,[52][53][54][55][56]…”