Numerical prediction on the photovoltaic performance of CZTS‐based thin film solar cell

Abir, Ahnaf Tahmid; Joy, Arifuzzaman; Mondal, Bipanko Kumar; Hossain, Jaker

doi:10.1002/nano.202200228

Cited by 15 publications

(7 citation statements)

References 65 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…When the absorber layer is too thick, minority charge carriers have a shorter lifetime that reduces the J SC . [ 30 ] The open‐circuit voltage, V OC , is relatively constant at a value of 0.972 V. The fill factor scantly decreases from 87.39 to 86.34% with increasing thickness of the absorber from 0.4 to 1 μm due to the increase in series resistance. [ 31 ] All these fluctuations result in a minor decrease in PCE from 32.5 to 32.4% across the range.…”

Section: Resultsmentioning

confidence: 99%

Design and Simulation of a High‐Efficiency CuInS₂Thin‐Film Solar Cell with a Thin CIS Current Augmenter

Zaki,

Mondal,

Pappu

et al. 2023

Physica Status Solidi (a)

Self Cite

View full text Add to dashboard Cite

Ternary chalcopyrite compound cupper indium disulfide (CuInS2)‐based photovoltaic cells are designed and numerically computed. In this design, n‐CdS and p++‐MoS2 have been used as window and back surface field (BSF) layers, respectively. The modeled n‐CdS/p‐CuInS2/p++‐MoS2 device provides power conversion efficiency (PCE) of 24.6% with JSC of 26.98 mA cm−2, VOC of 1.05 V, and fill factor (FF) of 86.93%. This efficiency is ≈60% higher the than n‐CdS/p‐CuInS2 single heterostructure. Furthermore, the use of a second CuInSe2 (CIS) absorber layer between CuInS2 absorber and MoS2 BSF layer significantly enhances the short‐circuit current. As a result, the current expressively improves to 38.48 mA cm−2, yielding an efficiency of 32.4%. The greater built‐in potential in absorber/BSF interface is attributed to the high JSC and VOC, causing the increment of efficiency. Besides, the photon management by Bragg reflector with 90% back and front reflectance recycling effect further increases the PCE to 36.1%. This work indicates the prospects of CuInS2 solar cells with a CuInSe2 current augmenter and MoS2 BSF layers for the fabrication of efficient CuInS2 solar cells.

show abstract

Section: Resultsmentioning

confidence: 99%

Design and Simulation of a High‐Efficiency CuInS₂Thin‐Film Solar Cell with a Thin CIS Current Augmenter

Zaki,

Mondal,

Pappu

et al. 2023

Physica Status Solidi (a)

Self Cite

View full text Add to dashboard Cite

show abstract

“…The carrier density was altered in the 10 15 −10 19 cm −3 range. The J SC is found to drop from the value of 38.95 to 32.746 mA cm −2 within limit of doping owing to the recombination losses which is enhanced at high carrier [34,35].…”

Section: Aggate 2 Absorber Layer Impacts On Pv Performancementioning

confidence: 93%

Design of a highly efficient n-CdS/p-AgGaTe₂/p+-SnS double-heterojunction thin film solar cell

et al. 2023

Self Cite

View full text Add to dashboard Cite

In this article, AgGaTe2-based n-CdS/p-AgGaTe2/p+-SnS double-heterojunction solar cells have been designed and explored utilizing a solar cell capacitance simulator (SCAPS-1D). This design manifested n-type CdS and p+-type SnS as window and back surface field (BSF) layer, respectively with the AgGaTe2 absorber. The major contributing parameters of these layers such as thickness, doping concentration level, and bulk flaws have been adjusted to reach the optimum computation. This introduced n-CdS/p-AgGaTe2/p+-SnS double-heterostructure solar cell demonstrates the significant power conversion efficiency (PCE) of 32.48% with the open circuit voltage, VOC of 0.96 V, short circuit current, JSC of 38.64 mA/cm2, and the Fill factor, FF of 87.31%. This remarkable efficiency is originated by the formation of a higher built-in potential at the p-AgGaTe2/p+-SnS heterostructure and a decrease in the surface recombination velocity brought on by the SnS BSF layer. This computational study demonstrates the potential of AgGaTe2 as an absorber and SnS as a BSF layer, and pave the way for the AgGaTe2-based experimental research in the era of solar cells.

show abstract

“…This makes Sb 2 X 3 thin films a more sustainable and resource‐efficient option for thin‐film photovoltaics. In addition, the melting points of Sb 2 X 3 thin film (Sb 2 Se 3 of 611 °C and Sb 2 S 3 of 550 °C) are significantly lower compared to the common CIGS (1,070 °C), [ 59 ] CdTe (1,041 °C), CZTS (990 °C), and Si (>1,400 °C). [ 53 ] This characteristic enables the sintering of Sb 2 X 3 thin films at relatively low temperatures of 300–400 °C to produce micron‐sized grains.…”

Section: Key Issues Of Sb2x3 Solar Cells Toward Commercializationmentioning

confidence: 99%

A Perspective of Antimony Chalcogenide Photovoltaics toward Commercialization

Wang

Tang

et al. 2023

Solar RRL

View full text Add to dashboard Cite

Recent developments in antimony chalcogenide (Sb2X3, X = S, Se, or SxSe1−x) solar cells attract significant scientific and technological interest in the renewable energy community. Over a relatively short period, the efficiency of Sb2X3 solar cells exhibits remarkable growth, escalating from 0.66% in 2000 to 10.75% in 2023. This substantial improvement suggests the potential of Sb2X3 solar cells for commercial applications. It is essential to discuss the prospects of Sb2X3 solar cells for commercial applications, yet there is no discussion on this. In this review, the potential of Sb2X3 solar cells is systematically assessed for industrialization from two key perspectives: the basic properties of Sb2X3 materials (including toxicity, physicochemical stability, and cost) and the device performance (including large area, efficiency, levelized cost of energy, and operational stability). Additionally, an outlook on the future development trends of Sb2X3 solar cells toward the potential commercialization is also provided. Also, the insights gained from this review can be applied to other emerging solar cell technologies as well such as Cu2ZnSn(S,Se)4, GeSe, etc.

show abstract

Numerical prediction on the photovoltaic performance of CZTS‐based thin film solar cell

Cited by 15 publications

References 65 publications

Design and Simulation of a High‐Efficiency CuInS₂Thin‐Film Solar Cell with a Thin CIS Current Augmenter

Design and Simulation of a High‐Efficiency CuInS₂Thin‐Film Solar Cell with a Thin CIS Current Augmenter

Design of a highly efficient n-CdS/p-AgGaTe₂/p+-SnS double-heterojunction thin film solar cell

A Perspective of Antimony Chalcogenide Photovoltaics toward Commercialization

Contact Info

Product

Resources

About

Numerical prediction on the photovoltaic performance of CZTS‐based thin film solar cell

Cited by 15 publications

References 65 publications

Design and Simulation of a High‐Efficiency CuInS2Thin‐Film Solar Cell with a Thin CIS Current Augmenter

Design and Simulation of a High‐Efficiency CuInS2Thin‐Film Solar Cell with a Thin CIS Current Augmenter

Design of a highly efficient n-CdS/p-AgGaTe2/p+-SnS double-heterojunction thin film solar cell

A Perspective of Antimony Chalcogenide Photovoltaics toward Commercialization

Contact Info

Product

Resources

About

Design and Simulation of a High‐Efficiency CuInS₂Thin‐Film Solar Cell with a Thin CIS Current Augmenter

Design and Simulation of a High‐Efficiency CuInS₂Thin‐Film Solar Cell with a Thin CIS Current Augmenter

Design of a highly efficient n-CdS/p-AgGaTe₂/p+-SnS double-heterojunction thin film solar cell