Design of a highly efficient n-CdS/p-AgGaTe<sub>2</sub>/p+-SnS double-heterojunction thin film solar cell

Islam, Md. Choyon; Mondal, Bipanko Kumar; Ahmed, Tanvir; Pappu, Md. Alamin Hossain; Mostaque, Shaikh Khaled; Hossain, Jaker

doi:10.1088/2631-8695/acd98a

Cited by 9 publications

(9 citation statements)

References 45 publications

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“…This rise in current is attributed to the thicker absorber layer absorbing more photons, generating an increased number of electron−hole pairs. 58 However, for CuS, AlSb, and WSe 2 , the V OC demonstrates almost independent behavior with varying thickness of ABS. In contrast, for CGS, MoS 2 , and Sb 2 S 3 , the V OC experiences a certain decrease with the increase in thickness.…”

Section: Function Of Abs Layer With Cds As Window and Variousmentioning

confidence: 89%

“…The higher doping raises the free carrier recombination which attributes lower current. 58 The FF and PCE for all PV cells gradually rise with the acceptor level and then abruptly drop at 1 × 10 17 cm −3 . The variation of diode parameters is ascribed to this result.…”

Section: Function Of Absorber Layer With In 2 S 3 As Window and Variousmentioning

confidence: 92%

“…Because of the larger absorber layer's ability to take in more photons and produce more electron−hole pairs, there has been a rise in current. 58 The V OC exhibits stability as depth upturns when employing WSe 2 , AlSb, and CuS as BSF layers. Besides, the structure n-ZnSe/p-ABS with CGS or MoS 2 or Sb 2 S 3 BSF attains a peak V OC at a thickness of 0.4 μm.…”

Section: Function Of Absorber Layer With Znse As Window and Variousmentioning

confidence: 96%

“…Moreover, an elevated acceptor concentration leads to heightened carrier recombination in the bulk region, consistent with observations in a preceding report. 58 The FF and PCE also decline at carrier densities surpassing 10 17 cm −3 and beyond. The PCE follows the J SC and FF, and the FF lowers as a result of the ideality factor for all devices expanding.…”

Section: Function Of Abs Layer With Cds As Window and Variousmentioning

confidence: 96%

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Numerical Expedition on the Potential of AgBiS₂-Based Thin Film Solar Cells Employing Different Carrier Transport Layers

Sayeem,

Siddika,

Basu

et al. 2024

ACS Omega

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In this study, a photovoltaic (PV) device has been developed by using AgBiS 2 as the key material. The simulation of the photovoltaic cell has been performed using the SCAPS-1D simulator to analyze the impact of each layer. The design incorporates three window layers, CdS, In 2 S 3 , and ZnSe, alongside six familiar compounds, AlSb, CuGaSe 2 (CGS), CuS, MoS 2 , Sb 2 S 3 , and WSe 2 , as the back surface field (BSF) layers. These heterostructures aim to uncover the potential of AgBiS 2 in the realm of photovoltaic technology. When AgBiS 2 functions within a singular heterojunction, specifically in configurations such as n-CdS/p-AgBiS 2 , n-In 2 S 3 /p-AgBiS 2 , and n-ZnSe/p-AgBiS 2 , the resulting values for open-circuit voltage (V OC ) and the short circuit current (J SC ) are found to be ∼0.90 V and ∼32 mA/cm 2 , respectively, while the corresponding power conversion efficiencies (PCE) are 23.56%, 22.60%, and 23.62%, respectively. On the contrary, the incorporation of various BSF layers like AlSb, CGS, CuS, MoS 2 , Sb 2 S 3 , and WSe 2 results in a substantial increase in V OC , leading to an enhancement in PCE. Among the AgBiS 2 based different dual-heterostructures, the outstanding PCE of 30.04% with a V OC of 1.12 V is achieved by n-ZnSe/p-AgBiS 2 /p + -Sb 2 S 3 device. In comparison, the n-ZnSe/p-AgBiS 2 /p + -CGS structure exhibits a similar PCE of 30.03% with a V OC of 1.12 V. Additionally, the n-ZnSe/p-AgBiS 2 /p + -MoS 2 arrangement demonstrates a PCE of 29.95% and a V OC of 1.12 V. The effective band alignments observed at the interfaces of ZnSe/AgBiS 2 and AgBiS 2 /MoS 2 , ZnSe/AgBiS 2 and AgBiS 2 /CGS, as well as ZnSe/AgBiS 2 and AgBiS 2 /Sb 2 S 3 contribute to a substantial built-in potential, leading to an elevated V OC . As an alternative to ZnSe, the CdS window could offer similar performances, whereas In 2 S 3 might provide a lower efficiency. The elaborate simulation findings highlight the substantial potential of AgBiS 2 as an absorber, particularly when coupled with different windows and BSF layers. This opens avenues for experimental research focused on AgBiS 2 in the era of photovoltaic cells.

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Section: Function Of Abs Layer With Cds As Window and Variousmentioning

confidence: 89%

Section: Function Of Absorber Layer With In 2 S 3 As Window and Variousmentioning

confidence: 92%

Section: Function Of Absorber Layer With Znse As Window and Variousmentioning

confidence: 96%

Section: Function Of Abs Layer With Cds As Window and Variousmentioning

confidence: 96%

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Numerical Expedition on the Potential of AgBiS₂-Based Thin Film Solar Cells Employing Different Carrier Transport Layers

Sayeem,

Siddika,

Basu

et al. 2024

ACS Omega

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“…Figure 1(b) presents the electronic band layout of the solar device. The n-CdS window layer has an electron affinity (χ) of 4.50 eV and a band gap (Eg) of 2.4 eV [41]. Its ionization energy is 6.9 eV.…”

Section: Device Structure and Computationmentioning

confidence: 99%

Numerical investigation on the role of ZnTe back surface layer in an efficient CuInS₂ thin film solar cell

Rana,

Abir,

Nushin

et al. 2023

Eng. Res. Express

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This paper presents the modeling and numerical inspection of an efficient CuInS2-based n-CdS/p-CuInS2/p+-ZnTe thin film solar cell applying the SCAPS-1D simulator. The various parameters used in the simulation have been obtained from existing literature. The optimization of the device has considered the width, doping concentration, and defect density of individual layer. The optimized standalone CuInS2 device shows an efficiency of 16.83%. Addition of ZnTe in the device gives an impressive efficiency of approximately 28.67%, having a current density, JSC of 25.58 mA/cm2, a VOC of 1.25 V, and an FF of 89.12%. The superior VOC is a result of the increased built-in potential formed at the hetero-interfaces of the device and the decrease in surface recombination velocity by back surface field effect in the ZnTe layer. The highest JSC is ascribed to the enhancement of the absorption of vis-infrared photons by back surface field (BSF) effect in the ZnTe layer. These findings demonstrate the potential for manufacturing high efficiency CuInS2-based thin film solar cells in the future.

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Current Remedy in Ultrathin Crystalline Si Solar Cell by Cu₂SnS₃ Thin Film toward High Efficiency

Mondal,

Abir,

Hossain

2024

Energy Tech

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An ultrathin 15 μm wafer‐based c‐Si solar cell is designed and simulated, wherein the current remedy is done by Cu2SnS3 (CTS) thin film. The ZnSe and AlSb are incorporated as window and back surface field (BSF) layers, respectively, in this model. The ultrathin Si‐based n‐ZnSe/p‐Si exhibits the short‐circuit current density of 30.66 mA cm−2 with an efficiency of 18.80%. The inclusion of p+‐CTS thin film as a second absorber layer has enhanced this current to 42.14 mA cm−2. By absorbing sunlight up to 1200 nm, the CTS layer is able to successfully overcome the constraint of thinner Si wafers on longer‐wavelength photon absorption leading to current augmentation. The addition of p++‐AlSb as the BSF layer also boosts the open‐circuit voltage by 300 mV. The rise in VOC is a result of the larger built‐in potential in ZnSe/Si, Si/CTS, and CTS/AlSb interfaces. With enriched current and voltage, the final proposed n‐ZnSe/p‐Si/p+‐CTS/p++‐AlSb heterostructure theoretically records an efficiency of 35.48% in ultrathin Si solar cells. The current compensation obtained using CTS thin film in this work can give optimism about the future of ultrathin Si solar cells.

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Design of a highly efficient n-CdS/p-AgGaTe₂/p+-SnS double-heterojunction thin film solar cell

Cited by 9 publications

References 45 publications

Numerical Expedition on the Potential of AgBiS₂-Based Thin Film Solar Cells Employing Different Carrier Transport Layers

Numerical Expedition on the Potential of AgBiS₂-Based Thin Film Solar Cells Employing Different Carrier Transport Layers

Numerical investigation on the role of ZnTe back surface layer in an efficient CuInS₂ thin film solar cell

Current Remedy in Ultrathin Crystalline Si Solar Cell by Cu₂SnS₃ Thin Film toward High Efficiency

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Design of a highly efficient n-CdS/p-AgGaTe2/p+-SnS double-heterojunction thin film solar cell

Cited by 9 publications

References 45 publications

Numerical Expedition on the Potential of AgBiS2-Based Thin Film Solar Cells Employing Different Carrier Transport Layers

Numerical Expedition on the Potential of AgBiS2-Based Thin Film Solar Cells Employing Different Carrier Transport Layers

Numerical investigation on the role of ZnTe back surface layer in an efficient CuInS2 thin film solar cell

Current Remedy in Ultrathin Crystalline Si Solar Cell by Cu2SnS3 Thin Film toward High Efficiency

Contact Info

Product

Resources

About

Design of a highly efficient n-CdS/p-AgGaTe₂/p+-SnS double-heterojunction thin film solar cell

Numerical Expedition on the Potential of AgBiS₂-Based Thin Film Solar Cells Employing Different Carrier Transport Layers

Numerical Expedition on the Potential of AgBiS₂-Based Thin Film Solar Cells Employing Different Carrier Transport Layers

Numerical investigation on the role of ZnTe back surface layer in an efficient CuInS₂ thin film solar cell

Current Remedy in Ultrathin Crystalline Si Solar Cell by Cu₂SnS₃ Thin Film toward High Efficiency