Design of a Ku-band high gain low noise amplifier

Bashir, Muhammad Adil; Ahmed, M. M.; Memon, Q. D.

doi:10.1109/rfm.2013.6757241

Cited by 3 publications

(2 citation statements)

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“…There are various technologies used in designing the active device for the LNA at Ku-band: Deng et al [13], Afshar et al [14], M. Yamagata and H. Hashemi [15], Liou et al [16] developed the X/Ku-band LNA topologies based on the CMOS technology. The GaAs MESFET was demonstrated in the LNA designs of Bashir et al [17], Islam et al [18]. Furthermore, LNAs using high electron mobility transistor (HEMT) were reported in the journals of M. Fallahnejad and A. Kashaniniya [19] and Shoaib et al [20].…”

Section: Design and Simulation Results Of The Low Noise Amplifermentioning

confidence: 99%

Design and fabrication of A Ku-band low noise amplifier using FR-4 substrate

Phuong¹,

Journet

Gia³

2019

TELKOMNIKA

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The low noise amplifier (LNA) plays an important role in many communication systems, especially at the receiver's front-ends. In modern RF designs, The LNA is usually fabricated on a microstrip printed circuit board (PCB) due to its simplicity and ability of integrating flexibly with other components in a receiving circuitry unit. At frequencies lower than 6 GHz, the most prevalent substrate material for a microstrip LNA is FR-4 while at higher frequencies of over 10 GHz, it is challenging to design the LNA using this material without causing considerable losses to the RF signal. There are many works related to design microstrip LNA at high frequencies, however, the dielectric substrates used in most of them were high-cost materials for low dielectric loss. This paper introduces an LNA topology using the common, low-cost FR-4 substrate which can be operated in Ku-band for applications such as small satellites' receivers, with the expected noise figure of lower than 1 dB, gain of around 10 dB and the return loss of around -10 dB. The stepped impedance matching technique has been used for transmission line optimization. The simulated and measured results are presented.

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Section: Design and Simulation Results Of The Low Noise Amplifermentioning

confidence: 99%

Design and fabrication of A Ku-band low noise amplifier using FR-4 substrate

Phuong¹,

Journet

Gia³

2019

TELKOMNIKA

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“…As an electronic device used to filter out the noise and strengthen the input signals received at the front ends of communication systems, the (LNA) is one of the most important components in the satellite [11]. Inside the Among the semiconductor-based devices, silicon germanium (SiGe) and GaAs devices are potentially ideal candidates for the development of wireless communication systems such as low noise amplifiers (LNA) [10].…”

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The Radiation Effect on Low Noise Amplifier Implemented in the Space-Aerial–Terrestrial Integrated 5G Networks

2021

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This paper provides the details of a study on the effects of electron irradiation on two Low Noise Amplifiers (LNA), the Gallium-Arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) based and the Silicon-Germanium (SiGe) Heterojunction Bipolar Transistor (HBT)-based. Previous studies have shown that the properties of GaAs and SiGe HBT's are very tolerant of gamma, neutron, and proton irradiation without additional radiation hardening. Nowadays, commercials on the shelves (COTS) LNAs have been used in CubeSat space communication systems which may be connected to other communication networks for the implementation of the space-aerial-terrestrial integrated 5G network (SATIN) systems projects, for satellites, launched into Low and Medium Earth Orbits. Previous studies suggest that the electron radiation in space may degrade the LNAs' performance and might even lead to its failure. Located at the front end of the communication receiver system, this paper conducted such investigation to evaluate the performance under the radiation of the GaAs and SiGe LNAs considering the physics of the technology of each LNA, respectively. The results indicate that both SiGe and GaAs technologies are affected after electron irradiation. As a result, this degradation of the LNAs' performance affected the communications system performance of the inter-satellite radio link. After the assessment of the quality performance of the communication link at the system level, it has been found that the inter-satellite space link will be at risk under high space radiation dose and the link BER degrades proportionally to the radiation dose level. INDEX TERMS Degradation, electron irradiation, gallium arsenide, inter-satellite link, low noise amplifier, silicon germanium, 5G. I. INTRODUCTION To improve performance and reduce the cost of the communication systems, academia and industry are active in the discovery of adequate solutions. With the introduction of the fifth-generation (5G), users are expecting reliable broadband services everywhere at a reasonable cost. However, the terrestrial network alone may not able to achieve quality service availability at any time and place, especially in a harsh environment such as oceans and mountains [1]. Therefore, the proposition comes to develop a non-terrestrial integrated 5G system [2]. Both satellite industry and communication start to work on this new paradigm to integrate the space, aerial and terrestrial networks to form the three-dimensional of 5G [3], [4]. Some infrastructures already existed in this new move, such as the iridium with its 66 active satellites constellation in providing voice and low data service for cellular phones [5]. In recent years, some space missions have been launched as well such as the Global Express to provide more advanced communications services with high throughput satellites (HTS) [6]. The GEO system has been the most popular approach in terms of providing commercial satellite communication services, however, the propagation delay, attenuation, and ...

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Design of a two stage Ku band low noise amplifier for satellite applications

Bishoyi

Karthikeyan

2015

2015 International Conference on Communications and Signal Processing (ICCSP)

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Design of a Ku-band high gain low noise amplifier

Cited by 3 publications

References 15 publications

Design and fabrication of A Ku-band low noise amplifier using FR-4 substrate

Design and fabrication of A Ku-band low noise amplifier using FR-4 substrate

The Radiation Effect on Low Noise Amplifier Implemented in the Space-Aerial–Terrestrial Integrated 5G Networks

Design of a two stage Ku band low noise amplifier for satellite applications

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