The incompatibility between current radio frequency identification (RFID) standards has led to the need for universal and wireless fidelity (Wi-Fi) compatible RFID for internet of things (IoT) applications. Such a universal RFID requires a single pole double throw (SPDT) switch and a low noise amplifier (LNA) to direct and amplify the received raw signal by the antenna. The SPDT suffers from low isolation, high insertion loss and low power handling capacity whereas the LNA suffers from smaller gain, bulky die area, lesser quality (Q) factor, limited tuning flexibility etc. because of passive inductor usage in current generation of devices. In this research, complementary metal oxide semiconductor (CMOS) based inductorless SPDT and LNA designs are proposed. The SPDT adopts a series-shunt topology along with parallel resonant circuits and resistive body floating in order to achieve improved insertion loss and isolation performance whereas the LNA design is implemented with the gyrator concept in which the frequency selective tank circuit is formed with an active inductor accompanied by the buffer circuits. The post-layout simulation results, utilizing 90 nm CMOS process of cadence virtuoso, exhibit that our SPDT design accomplishes 0.83 dB insertion loss, a 45.3 dB isolation, and a 11.3 dBm power-handling capacity whereas the LNA achieves a peak gain of 33 dB, bandwidth of 30 MHz and NF of 6.6 dB at 2.45 GHz center frequency. Both the SPDT and LNA have very compact layout which are 0.003 mm 2 and 127.7 μm 2 , respectively. Such SPDT and LNA design will boost the widespread adaptation of Wi-Fi-compatible IoT RFID technology.