Design of a Paralleled SiC MOSFET Half-Bridge Unit With Distributed Arrangement of DC Capacitors

Qu, Jianzhen; Zhang, Qianfan; Xue, Yongqiang; Cui, Shumei

doi:10.1109/tpel.2020.2978718

Cited by 31 publications

(6 citation statements)

References 38 publications

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“…However, the lower side switch still has current imbalance caused by coupled current. To address this problem, a dynamic current sharing method proposed in [89] optimizes the layout of PCB to enable decoupling capacitors to be located close to the halfbridge. External resistors are added in series with the power MOSFET to adjust the total ON-state resistance [90].…”

Section: B Active Methodologies: External Passive Componentsmentioning

confidence: 99%

Parallel Connection of Silicon Carbide MOSFETs—Challenges, Mechanism, and Solutions

Zhao

Wang

et al. 2023

IEEE Trans. Power Electron.

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Power semiconductor devices are often connected in parallel to increase the current rating of the power conversion systems. However, due to mismatched circuit parameters or semiconductor fabrication discrepancies, the current of paralleled power semiconductor devices can be unbalanced, which potentially leads to accelerated aging and long-term reliability issues. The fast-switching speed of silicon carbide (SiC) devices aggravates this problem due to its higher sensitivity to parasitic parameters. Numerous efforts have been dedicated to analyzing and addressing the current imbalance issue of paralleling SiC devices. This article comprehensively summarizes and presents state-of-the-art research regarding the current imbalance in paralleled SiC devices. Degree of imbalance is proposed to comprehensively quantify the current mismatch. Starting with mechanism analysis, different types of current imbalance are categorized. Various device parameters and the package layout that impact the current distribution are investigated. The existing solutions including passive methods and active methods are concluded and categorized. This work also incorporates insight into the future development needs of high-power multichip SiC module packaging and driving technologies.

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Section: B Active Methodologies: External Passive Componentsmentioning

confidence: 99%

Parallel Connection of Silicon Carbide MOSFETs—Challenges, Mechanism, and Solutions

Zhao

Wang

et al. 2023

IEEE Trans. Power Electron.

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“…It may cover starting from topics related to modeling [5] up to problems during fabrication [6]. It may also touch the problems tied to the SiC-MOSFET functioning [7] as well as its interaction with the surrounding equipment [8]. Therefore, studies that are devoted to exploring the efforts to reduce losses related to applications of high switching-frequency power converters are of scientific relevance.…”

Section: Introductionmentioning

confidence: 99%

Capacitor for the voltage-surge suppression in a SiC-MOSFET half-bridge inverter

Hasanah,

Djuriatno,

Ardhenta

et al. 2023

EEJET

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This paper explores some efforts to suppress the voltage surge appearing during the operation of a SiC-MOSFET-based half-bridge circuit in an inverter topology. The study is important to carry out, as the voltage surge problem does not come up when a Si-IGBT is used as the switching component in the half-bridge; however, some applications demand certain properties like what is found in a SiC MOSFET. Compared to Si-IGBT with rise-time/fall-time larger than 100 ns in general, the use of SiC MOSFET is preferable due to its much shorter switching time, less than 50 ns, which brings about a much lower switching loss and lower operating temperature. However, the choice of the usual electrolytic capacitor in the dc-link would produce an undesired voltage surge during the half-bridge operation. The origin of the surge is sometimes assigned to the inductance parasitic effect of the SiC-MOSFET high frequency. This research proves the benefit of a film capacitor to suppress the surge due to its lower equivalent series resistance (ESR) than that of the electrolytic capacitor. The results contribute to the consideration to take during the circuit realization in various applications, as there are not many papers yet found discussing the use of film capacitor in the dc-link of a SiC-MOSFET half-bridge inverter. This study also reveals the importance of the film capacitor placement during the design stage of SiC-MOSFET applications; moreover, motor controllers being equipped with an inverter such as described in this study have not been found yet in the market. The efforts investigated in this work would help to control the undesirable voltage spikes that frequently occur when applying a SiC-MOSFET to a half-bridge inverter design

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Section: Introductionmentioning

confidence: 99%

“…D UE to relative low fabrication yields, the current ratings of commercial discrete wide bandgap (WBG) power transistors are limited [1]- [3]. Therefore, it is necessary or even unavoidable to connect multiple WBG power transistors in parallel in high-power applications [3]- [7]. Additionally, the parallel connection of multiple low-current WBG power transistors can be more cost-effective than employing a single high-current transistor [5]- [7].…”

Section: Introductionmentioning

confidence: 99%

“…For the parallel operation of power MOSFETs, the current imbalance caused by MOSFET parameter mismatch and asymmetrical circuit layout [3], [8]- [10] poses a big challenge to efficiency and reliability; therefore, the current imbalance suppression has stimulated much academic and industrial research [6], [7], [9], [11]- [13]. The most direct measure of handling current imbalance is to symmetrize the layout of parallel transistors [10], [14].…”

Section: Introductionmentioning

confidence: 99%

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Quadrilateral Current Mode Paralleling of Power MOSFETs for Zero-Voltage Switching

Shen

Jiang

Zhao

et al. 2021

IEEE Trans. Power Electron.

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This paper proposes a generic zero-voltage switching (ZVS) scheme for parallel power MOSFETs. Uncoupled or inversely-coupled differential-mode (DM) commutation inductors are added to the midpoints (AC terminals) of parallel MOSFET half-bridges (HBs), and a time-delay-based control scheme is applied, generating a circulating current flowing through these commutation inductors. Thus, the inductor currents are reshaped as quadrilaterals, which enable all the parallel transistors to achieve ZVS. The mode of operation of the proposed paralleling technique is entitled quadrilateral current mode (QCM) due to the quadrilateral-shaped commutation inductor currents. The operating principle of the QCM-paralleling technique is detailed mathematically, yielding accurate closed-form analytical expressions for modulation parameters. Finally, simulations and experimental results of a QCM-enabled synchronous Buck dc-dc converter are presented to validate the theoretical considerations. Index Terms-Parallel power MOSFETs, zero-voltage switching (ZVS), quadrilateral current mode (QCM)

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Design of a Paralleled SiC MOSFET Half-Bridge Unit With Distributed Arrangement of DC Capacitors

Cited by 31 publications

References 38 publications

Parallel Connection of Silicon Carbide MOSFETs—Challenges, Mechanism, and Solutions

Parallel Connection of Silicon Carbide MOSFETs—Challenges, Mechanism, and Solutions

Capacitor for the voltage-surge suppression in a SiC-MOSFET half-bridge inverter

Quadrilateral Current Mode Paralleling of Power MOSFETs for Zero-Voltage Switching

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