“…1) First, by using our presented analysis theory on metal oxide semiconductor (MOS) waveguide in [5], the upper/under buffer layer thickness is taken as t 2 ¼ 2:5 "m, and the electrode thickness is taken as b 3 ¼ 0:2 "m. Under the above parameters, the mode loss caused by electrode absorption will be the smallest, and the electrode and buffer layer can be regarded to be half-infinitely thick.…”