Design of a Radial Vortex-Based Spin-Torque Nano-Oscillator in a Strain-Mediated Multiferroic Nanostructure for BFSK/BASK Applications

Abstract

Radial vortex-based spin torque nano-oscillators (RV-STNOs) have attracted extensive attention as potential nano microwave signal generators due to their advantages over other topological states, such as their higher oscillation, higher microwave power, and lower power consumption. However, the current driving the oscillation frequency of the STNOs must be limited in a small range of adjustment, which means less data transmission channels. In this paper, a new RV-STNO system is proposed with a multiferroic nanostructure, which consists of an ultrathin magnetic multilayer and a piezoelectric layer. Phase diagrams of oscillation frequency and amplitude with respect to piezostrain and current are obtained through micromagnetic simulation. The results show that the threshold current density of −4000-ppm compressive strain-assisted RV-STNOs is reduced from 2 × 109 A/m2 to 2 × 108 A/m2, showing one order of magnitude lower than that of conventional current-driven nano-oscillators. Meanwhile, the range of oscillation frequency adjustment is significantly enhanced, and there is an increased amplitude at the low oscillation point. Moreover, a promising digital binary frequency-shift key (BFSK) and binary amplitude-shift key (BASK) modulation technique is proposed under the combined action of current pulse and piezostrain pulse. They can transmit bit signals and show good modulation characteristics with a minimal transient state. These results provide a reference for developing the next generation of spintronic nano-oscillators with a wide frequency range and low power consumption, showing potential for future wireless communication applications.

First Observation of Induced Ferroelectric and Magnetoelectric Properties in Pristine and Ni‐Intercalated Mo2TiC2Tx Double Transition Metal MXene

“…[2,3] The development of MF materials that possess multiple ferroic orders and simultaneously has paved the way for an innovative applications such as signal generation, energy conversion, and data storage. [4,5,6] Such materials are highly attractive as they can overcome the challenges of random-access memories (RAMs) by offering efficient writing and low-cost reading. [7,8,9] With an increasing demand for high-density and high-performance devices, there is a shift toward miniaturizing and integrating the MF devices, scaling down to a few nanometers.…”