2010
DOI: 10.1364/oe.18.001994
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Design of a short electro-optic modulator based on SiGe HBT structure

Abstract: A SiGe electro-optic modulator operating at wavelength of 1.55 microm is proposed. The "ON" state voltage is set at 1.4V. The arm of the MZI waveguide required to generate a pi phase shift is 73.6 microm, and the total attenuation loss is 3.95 dB. The rise and fall delay time is 70.9 ps and 24.5 ps, respectively.

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Cited by 3 publications
(1 citation statement)
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“…In the past few years, numerous impressive works have been reported in silicon photonics, especially in the study of critical devices such as light sources [2]- [5], fiber couplers [6]- [8], WDM passive devices [9], [10], optical modulators [11]- [13] and Germanium waveguide photodetectors [14]- [16]. To develop a full on-chip optical interconnect, a point-to-point photonic interconnect with on-chip light source, optical modulator and germanium waveguide photodetector is considered to be the basic practice of integration.…”
Section: Introductionmentioning
confidence: 99%
“…In the past few years, numerous impressive works have been reported in silicon photonics, especially in the study of critical devices such as light sources [2]- [5], fiber couplers [6]- [8], WDM passive devices [9], [10], optical modulators [11]- [13] and Germanium waveguide photodetectors [14]- [16]. To develop a full on-chip optical interconnect, a point-to-point photonic interconnect with on-chip light source, optical modulator and germanium waveguide photodetector is considered to be the basic practice of integration.…”
Section: Introductionmentioning
confidence: 99%