Modeling and Analysis of an 80-Gbit/s SiGe HBT Electrooptic Modulator

Neogi, Tuhin Guha; Deng, Shengling; Novak, Joseph; Guo, Jong-Ru; Clarke, Ryan; LeRoy, Mitchell R.; McDonald, J. F.; Huang, Z. Rena

doi:10.1109/jphot.2010.2100038

Cited by 8 publications

(1 citation statement)

References 25 publications

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“…Carrier recombination models used include Shockley-Read-Hall (SRH) recombination, Auger recombination, and surface recombination. A Philips unified model (PHUMOB) and velocity saturation models [31] were used to determine the mobility calculations and to represent the majority and minority carrier dynamics in the PN junction. Because of the carrier recombination and heavy doping used, the Slotboom Bandgap Narrowing (BGN) [31] and the doping dependent SRH recombination-generation model are also included in the simulations.…”

Section: B Electrical Modelmentioning

confidence: 99%

Low V_πL_π and Driving Voltage Interleaved Silicon Phase Shifter for Modulation Applications

Begovic

Kim

Jiang³

et al. 2022

IEEE Photonics J.

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Interleaved doped Mach-Zehnder Modulators (MZMs) are one solution to attaining higher modulation efficiencies compared with lateral junction structures, due to greater modal overlap with the depletion regions of the PN junctions. In this work, we present an interleaved Si modulator device design and process simulation based on a three-step ion implantation process that aims to obtain a realistic PN junction doping profile using a Monte Carlo simulation method. A high doping concentration on the order of 5×10 18 cm −3 for the P and N regions is explored. Device simulations to track the carrier motion under different voltage biases are performed. Using equivalent medium theory, we calculated the modulation efficiency V π •L π of the interleaved Si modulator to be 0.19 V•cm under 1V reverse bias. This work is among the highest reported modulation efficiencies thus far in MZMs without photonic resonance structures.

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Section: B Electrical Modelmentioning

confidence: 99%