Design of a Si MMIC compatible ferroelectric varactor shunt switch for microwave applications

Ahamed, Faruque; Subramanyam, Guru

doi:10.1109/isaf.2004.1418392

“…The design of the ferroelectric varactor shunt switch has been reported previously [8,9]. Briefly, the varactor shunt switch consists of a CPW transmission line loaded by a ferroelectric varactor in the middle (as shown in figure 1), such that the large capacitance of the varactor at zero bias will shunt the input signal to ground, thus isolating the output port, resulting in the OFF state of the device.…”

Section: Ferroelectric Varactor Shunt Switchesmentioning

confidence: 99%

“…The important device parameters are (i) the varactor area (overlap area of the metal1 and metal2 layers), (ii) CPW transmission line parameters, such as the width of the center conductor, spacing between the center conductor and ground lines, and length of the CPW line sections, (iii) parasitic inductance and resistance of the thin-line shunting to ground in metal1, and (iv) the dielectric properties of the nano-structured BST thinfilm. The varactor shunt switch can be precisely modeled as reported earlier [8,9]. The larger area of the varactor results in a large zero-bias capacitance of the varactor.…”

Section: Ferroelectric Varactor Shunt Switchesmentioning

confidence: 99%

A New Ferroelectric Varactor Shunt Switch for Microwave and Millimeterwave Reconfigurable Circuits

Subramanyam¹,

Ahamed²,

Biggers³

et al. 2005

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“…The loss tangent (68) is found from the electrical model of the capacitive test structure, using the equation for the shunt resistance such that (23) …”

Section: Rf Electrical Characterization 141 Capacitive Test Structurementioning

confidence: 99%

Biotronics

Grote¹,

Yaney²,

Ouchen³

et al. 2012

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The public reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing the collection of information. Send comments regarding this burden estimate or any other aspect of this collection of information, including suggestions for reducing this burden, SPONSORING/MONITORING AGENCY ACRONYM(S)AFRL/RX SPONSORING/MONITORING AGENCY REPORT NUMBER(S)AFRL-RX-WP-TR-2013-0023 DISTRIBUTION/AVAILABILITY STATEMENTApproved for public release; distribution unlimited. SUPPLEMENTARY NOTESApproved by 88ABW Public Affairs Office: Case number 88ABW-2013-0337 on 24 January 2013. Report contains color. ABSTRACTThis in-house effort processed deoxyribonucleic acid (DNA) and silk based bio polymer materials, aptamers and peptides into suitable electronic, photonic and chem/bio sensor materials. Blended nonlinear, metal, semiconductor, polymer, aptamer and peptide guests with biopolymers to enhance material properties taking advantage of self assembly/orientation and unique electromagnetic and optical properties. Fabricated and characterized test devices.

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“…The thickness of the substrate and SiO 2 layer were 500 µm and 0.3 µm respectively. The design of the ferroelectric varactor shunt switch has been reported previously [5][6]. In this study, we designed and fabricated devices with different varactor area, ranging from 5x5 µm 2 to 17.5 x 17.5 µm 2 .…”

Section: Designmentioning

confidence: 99%

“…The varactor shunt switch can be precisely modeled as reported earlier [5,6]. Figure 3 shows the simple electrical model for the device.…”

Section: Bst G G Smentioning

confidence: 99%

RF performance evaluation of ferroelectric varactor shunt switches

Subramanyam

¹

,

Ahamed

²

,

Biggers

³

et al. 2005

Microw. Opt. Technol. Lett.

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The public reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing the collection of information. Send comments regarding this burden estimate or any other aspect of this collection of information, including suggestions for reducing this burden, to Department of Defense, Washington Headquarters Services, Directorate for Information SPONSORING/MONITORING AGENCY NAME(S) AND ADDRESS(ES) 10. SPONSORING/MONITORING AGENCY ACRONYM(S)AFRL ABSTRACTThis paper addresses experimental RF performance evaluation, and electrical parameter extraction of different size ferroelectric varactor shunt switches. The ferroelectric varactor shunt switch operation is based on nonlinear dielectric tunability of a Ba 0.6 Sr 0.4 TiO 3 (BST) thinfilm sandwiched between two metal layers in the parallel plate configuration. Coplanar waveguide implementation of the varactor shunt switch results in a high speed RF switch, with a simple two-metal layer Si MMIC compatible process on high resistivity Si substrates. Experimental RF performance of the switches show low insertion loss for smaller area devices, with good isolation for larger area devices. To optimize the device design, RF performance of multiple devices were tested, and electrical parameters were extracted. The capacitance of the varactor shunt switches tested were tunable more than 4:1 for bias voltages below 12 V. The switching speed of the devices tested was approximately 43 ns based on the step response measurements. performance of multiple devices were tested, and electrical parameters were extracted. The capacitance of the varactor shunt switches tested were tunable more than 4:1 for bias voltages below 12 V. The switching speed of the devices tested was approximately 43 ns based on the step response measurements. SUBJECT TERMS

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Design of a Si MMIC compatible ferroelectric varactor shunt switch for microwave applications

Cited by 8 publications

References 8 publications

A New Ferroelectric Varactor Shunt Switch for Microwave and Millimeterwave Reconfigurable Circuits

A New Ferroelectric Varactor Shunt Switch for Microwave and Millimeterwave Reconfigurable Circuits

Biotronics

RF performance evaluation of ferroelectric varactor shunt switches

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