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The public reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing the collection of information. Send comments regarding this burden estimate or any other aspect of this collection of information, including suggestions for reducing this burden, to Department of Defense, Washington Headquarters Services, Directorate for Information SPONSORING/MONITORING AGENCY NAME(S) AND ADDRESS(ES) 10. SPONSORING/MONITORING AGENCY ACRONYM(S)AFRL ABSTRACTThis paper addresses experimental RF performance evaluation, and electrical parameter extraction of different size ferroelectric varactor shunt switches. The ferroelectric varactor shunt switch operation is based on nonlinear dielectric tunability of a Ba 0.6 Sr 0.4 TiO 3 (BST) thinfilm sandwiched between two metal layers in the parallel plate configuration. Coplanar waveguide implementation of the varactor shunt switch results in a high speed RF switch, with a simple two-metal layer Si MMIC compatible process on high resistivity Si substrates. Experimental RF performance of the switches show low insertion loss for smaller area devices, with good isolation for larger area devices. To optimize the device design, RF performance of multiple devices were tested, and electrical parameters were extracted. The capacitance of the varactor shunt switches tested were tunable more than 4:1 for bias voltages below 12 V. The switching speed of the devices tested was approximately 43 ns based on the step response measurements. performance of multiple devices were tested, and electrical parameters were extracted. The capacitance of the varactor shunt switches tested were tunable more than 4:1 for bias voltages below 12 V. The switching speed of the devices tested was approximately 43 ns based on the step response measurements. SUBJECT TERMS

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