Design of a tandem distributed Bragg reflectors specialized for enhancing the efficiency of GaN-based ultraviolet light-emitting diodes

Photoluminescence and lasing characteristics of single nonpolar GaN microwires

“…1,2 Gallium nitride (GaN) has a wide direct band gap of 3.4 eV in the ultraviolet (UV) region, is stable at high temperature, and is applicable in high power electronics. 3 In addition, GaN also possesses large exciton binding energy and fast saturation speed of electronic dri, so that GaN has plenty of applications in nanolasers, 4 eld-effect transistors, 5 light-emitting diodes, 6,7 electric generators, 8,9 eld emitters, 10,11 and UV photosensors. 12 Low-dimensional structures such as GaN microwires (MWs) are expected to offer potential advantages for micro-nano photonics and micro-nano electronics due to their non-planar geometry, high crystalline quality, superior optical gain property and higher compatibility with the well-established silicon technology.…”