Design of a total-dose radiation hardened monolithic CMOS DC-DC boost converter

Abstract

This paper presents the design and implementation of a monolithic CMOS DC-DC boost converter that is hardened for total dose radiation. In order to improve its radiation tolerant abilities, circuit-level and devicelevel RHBD (radiation-hardening by design) techniques were employed. Adaptive slope compensation was used to improve the inherent instability. The H-gate MOS transistors, annular gate MOS transistors and guard rings were applied to reduce the impact of total ionizing dose. A boost converter was fabricated by a standard commercial 0.35 m CMOS process. The hardened design converter can work properly in a wide range of total dose radiation environments, with increasing total dose radiation. The efficiency is not as strongly affected by the total dose radiation and so does the leakage performance.

Comprehensive Case Design Research in Analog IC Design Course with the Background of Engineering Education Professional Certification

“…However, in the radiation environment, the I-V characteristics of the BJT will have considerable drift, causing the output voltage of reference circuit to be inaccuracy. Using DTMOS instead of BJT in the voltage reference can greatly improve the radiation resistance [3]. Figure 1 shows an example of DTMOS voltage reference circuit.…”

A radiation-hardened Buck converter

“…The application of Buck in space has to consider all kinds of radiation effect. For CMOS devices, total ionizing dose (TID) effect is prone to occur in the radiation environment, and it will lead to threshold voltage shift [1,2], transconductance degradation [3,4], carrier mobility reduction and leakage current [5,6,7,8], resulting in the degradation or failure of devices and circuits [9,10,11,12,13,14,15]. In this aspect, it is of great significance to research on the radiation-resistant reinforcement of Buck.…”