Design of an Efficient AgInSe₂Chalcopyrite‐Based Heterojunction Thin‐Film Solar Cell

Abstract

Herein, AgInSe2 absorber–based n‐In2S3/p‐AgInSe2/p+‐molybdenum disulfide heterojunction thin‐film solar device is numerically explored with the help of SCAPS‐1D software. The major focus of this numerical study is to inquire the performances of the purported solar cell and hence unearth the highest efficiency of the AgInSe2 (AISe) solar cell. Herein, the functions of different parameters like thicknesses, doping and defect density, working temperature, series, and shunt resistances are investigated. The recommended solar cell parades the short‐circuit current density, open circuit voltage, fill factor, and efficiency of 39.11 mA cm−2, 1.10 V, 82.26%, and 35.44%, respectively. It is noteworthy that the efficiency is comparatively higher than the previously reported AISe‐based solar cell. The AgInSe2 semiconductor is easy to fabricate as well as has good electrical properties, therefore this proposed solar cell is highly efficient and cost effective.

Design and performance evaluation of all-inorganic AgTaS3 perovskite solar cells

“…This is a frequent observation in recent studies. 20,37,40,42 As carrier diffusion length exceeds the breadth of the BSF layer for these defects, no deterioration is observed in the study. 40,42…”

“…Even as the volume of defects varies within the range of 10 12 cm −3 to 10 16 cm −3 , the shrink in carrier diffusion length as a sequel of diminishing the carrier lifetime is not significant enough with respect to the window breadth. 40 Consequently, the performance of the cell is largely consistent.…”

Design of a highly efficient n-CdS/p-AgGaTe2/p+-SnS double-heterojunction thin film solar cell

“…Figure 4(c) also ensures that PV parameters are independent of defect levels of CdS layer. The carrier diffusion length and lifetime do not significantly changes with thickness, doping and defects of CdS layer within these investigation ranges, therefore, cell performance shows almost constant nature [40].…”

[(Ph3P)2Ag(μ-SeCH2Ph)2In(SeCH2Ph)2]: a new heterobimetallic single source precursor as a springboard to bulk, nano and thin film ternary AgInSe2 materials

“…Additionally, silver-based chalcopyrites exhibit fewer shorting effects commonly observed in copper-based photovoltaics, attributed to the large diffusion coefficients of copper. 32,33 For instance, different groups have evaluated the photon absorber properties of AgInSe 2 nanorods and thin films and few of them have been successfully used in semiconductor sensitized solar cells. 34,35…”