2018
DOI: 10.1002/adma.201805660
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Design of an Inorganic Mesoporous Hole‐Transporting Layer for Highly Efficient and Stable Inverted Perovskite Solar Cells

Abstract: The unstable feature of the widely employed organic hole‐transporting materials (HTMs) (e.g., spiro‐MeOTAD) significantly limits the practical application of perovskite solar cells (PSCs). Therefore, it is desirable to design new structured PSCs with stable HTMs presenting excellent carrier extraction and transfer properties. This work demonstrates a new inverted PSC configuration. The new PSC has a graded band alignment and bilayered inorganic HTMs (i.e., compact NiOx and mesoporous CuGaO2). In comparison wit… Show more

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Cited by 192 publications
(133 citation statements)
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“…The Sr:NiO x films achieved a maximum VBM downshift value of 0.30 eV compared with the pristine NiO x . Figure b shows the energy diagram of the PSCs, in which the energy levels of FTO, MAPbI 3 , PC 61 BM, BCP, and Ag were generally accepted values from the literature . Clearly, deeper VBM of the HTLs can better align the band structures at the NiO x /MAPbI 3 interface, which is beneficial to hole extraction and reducing the loss of photocarrier accumulated at the interface of MAPbI 3 and HTLs …”
Section: Device Photovoltaic Parameters Of Pscs With Different Niox Hmentioning
confidence: 88%
See 1 more Smart Citation
“…The Sr:NiO x films achieved a maximum VBM downshift value of 0.30 eV compared with the pristine NiO x . Figure b shows the energy diagram of the PSCs, in which the energy levels of FTO, MAPbI 3 , PC 61 BM, BCP, and Ag were generally accepted values from the literature . Clearly, deeper VBM of the HTLs can better align the band structures at the NiO x /MAPbI 3 interface, which is beneficial to hole extraction and reducing the loss of photocarrier accumulated at the interface of MAPbI 3 and HTLs …”
Section: Device Photovoltaic Parameters Of Pscs With Different Niox Hmentioning
confidence: 88%
“…MAPbI 3 perovskite films based on doped NiO x HTLs show much more efficient PL quenching than that based on the pristine NiO x , indicating its enhanced hole extraction and transport efficiency (Figure c). As shown in Figure d, the PL decay curves of the samples were fitted with phenomenological biexponential functions: y = y 0 + A 1 exp[−( x − x 0 )/τ 1 ] + A 2 exp[−( x − x 0 )/τ 2 ] to obtain decay lifetimes . The average carrier lifetimes ( τ 0 ) of MAPbI 3 perovskite films with the pristine NiO x , Mg:NiO x , Ca:NiO x , Sr:NiO x , and Ba:NiO x HTLs were fitted to be 4.89, 1.69, 1.57, 1.44, and 3.66 ns, respectively, which were consistent with steady‐state PL results.…”
Section: Device Photovoltaic Parameters Of Pscs With Different Niox Hmentioning
confidence: 99%
“…The PL quenching was more efficient for the perovskite film on NiO NW-6 hH SC (Figure 3c), suggesting betterc harge transport/extraction ability and an interfacialt rap passivation effect. [17,32] The corresponding EIS spectra are shown in Figure 3d and the fitting equivalent circuit and relatedd ata are also provided in Figure S4 and Ta ble S1.N otably,t he high-frequency and low-frequency region corresponded to the charget ransfer resistance (R ct )a nd recombination resistance( R rec ), respectively. [40] Al ower R ct and higher R rec were achieved for the NiO NW-6 hd evice, indicating faster and more efficient charge transfer/extraction at the NiO/ perovskite interface.…”
Section: Resultsmentioning
confidence: 99%
“…[11][12][13][14][15] Such NiObased devices exhibit excellent long-term moisture and thermal stability. [16][17][18] However,t oo ur knowledge, the majority of recentw ork has focusedo nd oping NiOt of urtheri mprovei ts intrinsicc onductivity for betterd evicep erformance. [19][20][21][22][23] As previously reported, this type of solution-based NCs are prone to aggregationa nd lead to ar ough or discontinuous filmm orphology, which would further create an imperfect NiO/perovskite interface.…”
Section: Introductionmentioning
confidence: 99%
“…To further explore the enhanced performance of the perovskite devices by the doping of F8BT, steady photoluminescence (PL) measurement of the perovskite films upon pure and mixed polymer HTLs was studied and shown in Figure b. Compared with the unmodified samples, PL quenching effect is observed in the perovskite films with F8BT‐doped PTAA HTL, implying more efficient charge carrier extraction and charge transfer using mixed polymer HTL . We also fabricated the hole‐only devices with the structure ITO/HTLs/perovskite/MoO 3 (10 nm)/Ag and shown in Figure c.…”
Section: Resultsmentioning
confidence: 99%