Design of Area-Efficient, Robust and Reliable Junction Termination Extension in SiC Devices

Bolotnikov, Alexander; Losee, Peter A.; Deeb, Peter; Wang, Meng Li; Dunne, Greg; Kretchmer, J.; Arthur, Steve; Stevanovic, Ljubisa

doi:10.4028/www.scientific.net/msf.858.737

Cited by 11 publications

(5 citation statements)

References 10 publications

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“…In order to sustain the high voltage, the junction termination has to be designed to spread the electric field that naturally occurs at the edge of the termination. A plethora of papers present in the literature report on techniques that fulfill this task with a relatively high efficiency (>80%) [16][17][18][19][20][21][22][23][24][25][26][27][28][29][30][31][32][33][34][35]. Another study on high-voltage bipolar diodes from SuperGrid has shown that an efficient peripheral protection is achieved by a mesa structure with a combination of junction termination extension (JTE) with JTE rings.…”

Section: High-voltage Pin Diode Designmentioning

confidence: 99%

10 kV Silicon Carbide PiN Diodes—From Design to Packaged Component Characterization

et al. 2019

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This paper presents the design, fabrication and characterization results obtained on the last generation (third run) of SiC 10 kV PiN diodes from SuperGrid Institute. In forward bias, the 59 mm2 diodes were tested up to 100 A. These devices withstand voltages up to 12 kV on wafer (before dicing, packaging) and show a low forward voltage drop at 80 A. The influence of the temperature from 25 °C to 125 °C has been assessed and shows that resistivity modulation occurs in the whole temperature range. Leakage current at 3 kV increases with temperature, while being three orders of magnitude lower than those of equivalent Si diodes. Double-pulse switching tests reveal the 10 kV SiC PiN diode’s outstanding performance. Turn-on dV/dt and di/dt are −32 V/ns and 311 A/µs, respectively, whereas turn-off dV/dt and di/dt are 474 V/ns and −4.2 A/ns.

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Section: High-voltage Pin Diode Designmentioning

confidence: 99%

10 kV Silicon Carbide PiN Diodes—From Design to Packaged Component Characterization

et al. 2019

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“…Note, that the semiconductor performance, yield, and cost are closely related to the active/total area ratio, which is set by the required termination length and is more critical for UHV devices. Generally speaking, the termination structure consumes a large area in a reliable high voltage SiC device, and, therefore, it significantly contributes to the cost [49]. In the SiC low/medium voltage (i.e., 1.2 kV) device segment, A. Bolotnikov et al, demonstrated a JTE length requirement of approximately 3-5 times the device thickness [49].…”

Section: Assessment Of Junction Termination Extension Structures For Ultrahigh-voltage Silicon Carbidementioning

confidence: 99%

“…Generally speaking, the termination structure consumes a large area in a reliable high voltage SiC device, and, therefore, it significantly contributes to the cost [49]. In the SiC low/medium voltage (i.e., 1.2 kV) device segment, A. Bolotnikov et al, demonstrated a JTE length requirement of approximately 3-5 times the device thickness [49]. However, the increasing design challenge for high voltage devices (i.e., 20-30 kV) usually requires longer JTE lengths (i.e., 4-9 times [6], [7], [13]), as it varies with JTE design complexity and material process maturity.…”

Section: Assessment Of Junction Termination Extension Structures For Ultrahigh-voltage Silicon Carbidementioning

confidence: 99%

Assessment of Junction Termination Extension Structures For Ultrahigh-Voltage Silicon Carbide Pin-Diodes; A Simulation Study

Johannesson

Nawaz

Nee

2021

IEEE Open J. Power Electron.

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The junction termination extension (JTE) structures for ultrahigh-voltage (UHV) devices consumes a considerable part of the semiconductor chip area. The JTE area is closely related to chip performance, process yield and ultimately device cost. The JTE lengths for UHV devices (i.e., > 30 kV) are still unknown, not visible in the scientific literature and have therefore been predicted in this study by means of two-dimensional numerical simulations using the Sentaurus based technology computeraided design (TCAD) tool. A previously reported space-modulated, two-zone JTE (SM-JTE) structure has been used as an input to set up a suitable TCAD model, which is further scaled to JTE lengths required for 40 kV class and 50 kV class SiC PiN diodes. The simulation results indicate that the SM-JTE requires an 1800 µm one-sided JTE length with 27 guard rings for a 40 kV theoretical PiN diode and 2700 µm with 36 guard rings for a 50 kV device, resulting in breakdown voltages of 41.4 kV and 51.7 kV, respectively. Moreover, the design considerations of different JTE categories are discussed with focus on the adaptability of the termination structures in ultrahigh-voltage devices, e.g., VB > 30 kV, which results in a comparison of the SM-JTE structure with other high-voltage JTE designs.

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“…Junction termination extension (JTE) and floating field rings (FFR) are the most widely used terminations for power devices [3][4][5]. JTE provides a simple method, but the design window is quite narrow [3,4] and is sensitive to interface charges [6]. A combined termination with JTE and FFR widens the design window [7], but increases the cost.…”

mentioning

confidence: 99%

“…To withstand high voltage, junction termination is a must for vertical power devices. Junction termination extension (JTE) and floating field rings (FFR) are the most widely used terminations for power devices [3][4][5]. JTE provides a simple method, but the design window is quite narrow [3,4] and is sensitive to interface charges [6].…”

mentioning

confidence: 99%

Demonstration of a simple and efficient design methodology for high‐voltage floating field limiting ring in SiC power devices

Zhang,

Zhou,

et al. 2024

Electronics Letters

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This letter, proposes and experimentally demonstrates a simple and efficient estimating method for high‐voltage floating field ring (FFR). Four rings in FFR are used to determine the influence of rings’ distance (d) on the voltage drops of the highest voltage to the third ring (Vn+1) and the third to the second ring (Vn). Then, two voltage curves (curves for Vn+1 and Vn) based on d are drawn. For a target breakdown voltage, by iterating between the curves for Vn+1 and Vn, the number of FFRs and corresponding distances can be found. Based on this method, an 8.0 kV PN diode with 111 FFRs is designed and fabricated. The measured breakdown voltage is 7840 V, which reaches 98% of the designed value. This method provides a simple and efficient design for high‐voltage SiC devices, especially for ultra‐high voltage applications where the number of rings exceeds dozens.

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Design of Area-Efficient, Robust and Reliable Junction Termination Extension in SiC Devices

Abstract: This paper discusses SiC JTE design tradeoffs required to maximize device performance while minimizing consumed die area, fabrication cost and maintaining good reliability. Modeling and experimental results are provided.

Cited by 11 publications

References 10 publications

10 kV Silicon Carbide PiN Diodes—From Design to Packaged Component Characterization

10 kV Silicon Carbide PiN Diodes—From Design to Packaged Component Characterization

Assessment of Junction Termination Extension Structures For Ultrahigh-Voltage Silicon Carbide Pin-Diodes; A Simulation Study

Demonstration of a simple and efficient design methodology for high‐voltage floating field limiting ring in SiC power devices

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