Design of Broadband Inductorless LNAs in Ultra-Scaled CMOS Technologies

Bevilacqua, Andrea; Camponeschi, Matteo; Tiebout, M.; Gerosa, A.; Neviani, A.

doi:10.1109/iscas.2008.4541664

Cited by 5 publications

(2 citation statements)

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“…Alternatively, a common-gate stage together with a noise-canceling architecture can be used to decouple the noise figure from the matching requirement without the need of a global negative feedback [41]. On the other hand, shunt-shunt resistive feedback can enable the design of very compact broadband inductorless LNAs [42]. Finally, careful design techniques have to be used to minimize the coupling of the transmitted signal at the antenna to the LNA input port while preserving the I/Q phase mismatches required level.…”

Section: Architecture Comparisonmentioning

confidence: 99%

Integrated SFCW Transceivers for UWB Breast Cancer Imaging: Architectures and Circuit Constraints

Bassi

Bevilacqua

Gerosa

et al. 2012

IEEE Trans. Circuits Syst. I

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We present a behavioral analysis of two different transceiver architectures for UWB breast cancer imaging employing a SFCW radar system. A mathematical model of the direct conversion and super heterodyne architectures together with a numerical breast phantom are developed. FDTD simulations data are used on the behavioral model to investigate the limits of both architectures from a circuit-level point of view. Insight is given into I/Q phase inaccuracies and their impact on the quality of the final reconstructed images. The result is that the simplicity of the direct conversion makes the receiver more robust towards the critical circuit impairments for this application, that is the random phase mismatches between the TX and RX local oscillators

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Section: Architecture Comparisonmentioning

confidence: 99%

Integrated SFCW Transceivers for UWB Breast Cancer Imaging: Architectures and Circuit Constraints

Bassi

Bevilacqua

Gerosa

et al. 2012

IEEE Trans. Circuits Syst. I

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“…Many different approaches of broadband LNA in scaled CMOS can be found, most commonly they consist of common gate stages, sometimes with noise canceling [4] or common source and cascode topologies with feedback. The feedback can be implemented as inductive source degeneration [5] or with resistive negative feedback [6, 7]. Other promising architectures are distributed LNAs [8, 9].…”

Section: Introductionmentioning

confidence: 99%

Ultra compact multi-standard low-noise amplifiers in 28 nm CMOS with inductive peaking

Sobotta

Belfiore

Ellinger

2017

Int. J. Microw. Wireless Technol.

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This work presents the design of two compact multi-standard low-noise amplifier (LNA) in a 28 nm low-power bulk CMOS process. The transistor parameters were optimized by the gm/ID method taking into account the parasitics and the behavior of highly scaled transistors. To cover the industrial science medical (ISM)-bands around 2.4 and 5.8 GHz, the WLAN band as well as the Ku band a bandwidth enhancement is required. Two versions of LNAs, one with vertical inductors and one with active inductors, are implemented and verified by measurements. The noise figure (NF) exhibits 4.2 dB for the LNA with active inductors and 3.5 dB for the LNA with vertical inductors. The voltage gain reaches 12.8 and 13.4 dB, respectively, with a 3 dB-bandwidth of 20 GHz. Both input referred 1-dB-compression points are higher than −12 dBm making the chips attractive for communication standards with high linearity requirements. The chips consume 53 mW DC power and the LNA with active inductors occupies a core area of only 0.0018 mm2, whereas the version with vertical inductors requires 0.021 mm2.

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A Low Power Inductorless LNA With Double ${\rm G} _{\rm m}$ Enhancement in 130 nm CMOS

Belmas

Hameau

Fournier

2012

IEEE J. Solid-State Circuits

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Design of Broadband Inductorless LNAs in Ultra-Scaled CMOS Technologies

Abstract: Shunt-shunt resistive feedback is used in this paper to design inductorless broadband LNAs in a digital 45 nm CMOS technology. Simulation results show 18 dB gain over a 10 GHz bandwidth, with NF < 3 dB and IIP3 > -7 dBm in-band, while consuming 32 mW from a 1 V supply voltage

Cited by 5 publications

References 2 publications

Integrated SFCW Transceivers for UWB Breast Cancer Imaging: Architectures and Circuit Constraints

Integrated SFCW Transceivers for UWB Breast Cancer Imaging: Architectures and Circuit Constraints

Ultra compact multi-standard low-noise amplifiers in 28 nm CMOS with inductive peaking

A Low Power Inductorless LNA With Double ${\rm G} _{\rm m}$ Enhancement in 130 nm CMOS

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