Shunt-shunt resistive feedback is used in this paper to design inductorless broadband LNAs in a digital 45 nm CMOS technology. Simulation results show 18 dB gain over a 10 GHz bandwidth, with NF < 3 dB and IIP3 > -7 dBm in-band, while consuming 32 mW from a 1 V supply voltage

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This work presents a CMOS X-band I Q upconverter for a FMCW radar system. The use of passive current mixers allows to address the main drawbacks of CMOS technology, namely flicker noise and reduced linearity due to low supply voltage, paving the way to monolithic integration with digital intensive baseband circuitry. Prototypes were built in a 65 nm digital technology, showing a peak output power of 3 4 dBm at 10.6 GHz with a corresponding HD 3 lower than 40 dBc and an image rejection greater than 41 dB across the 9.5-12 GHz LO band, while adding negligible phase noise to the output signal. The circuit occupies an area of 0.91 mm 2 and consumes 192 mW. Index Terms-Direct digital synthesis (DDS), frequency-modulated continuous-wave (FMCW), X-band upconverters.

In this work a 2.2 GHz quadrature receiver front-end suitable for low-power applications is presented. The low-noise amplifier, the mixer and the voltage-controlled oscillator are merged into a single stage, making the circuit capable of extreme current reuse while keeping it still functional at low supply voltage. A careful linear timevariant analysis is proven to be necessary to accurately predict the conversion gain and the bandwidth of the downconverter. A prototype, implemented in a 90 nm CMOS technology, validates the theoretical analysis, showing 27 dB of downconversion gain over a 14 MHz base-band bandwidth; the noise figure is 13 dB with a flicker corner frequency of 200 kHz; the input-referred 1 dB compression point is -23.7 dBm. The circuit draws only 1.3 mA from a 1.0 V supply.