Design of Class-E Amplifier With MOSFET Linear Gate-to-Drain and Nonlinear Drain-to-Source Capacitances

Wei, Xiuqin; Sekiya, Hiroo; Kuroiwa, Shingo; Suetsugu, Tadashi; Kazimierczuk, Marian K.

doi:10.1109/tcsi.2011.2123490

Cited by 72 publications

(40 citation statements)

References 25 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Moreover, we assume that all components are linear (neglecting variations of C oss with voltage on circuit operation, as treated in [23][24][25][26].) It is also assumed that the transistor is operated at 50% duty ratio.…”

Section: Design Methodologymentioning

confidence: 99%

Design of Single-Switch Inverters for Variable Resistance/Load Modulation Operation

Rosłaniec

Jurkov

Bastami

2015

IEEE Trans. Power Electron.

129

View full text Add to dashboard Cite

Abstract-Single-switch inverters such as the conventional class E inverter are often highly load sensitive, and maintain zero-voltage switching over only a narrow range of load resistances. This paper introduces a design methodology that enables rapid synthesis of class E and related single-switch inverters that maintain ZVS operation over a wide range of resistive loads. We treat the design of Class-E inverters for variable resistance operation and show how the proposed methodology relates to circuit transformations on traditional class E designs. We also illustrate the use of this transformation approach to realize  2 inverters for variable-resistance operation.The proposed methodology is demonstrated and experimentally validated at 27.12 MHz in a class E and  2 inverter designs that operate efficiently over 12:1 load resistance range for an 8:1 and 10:1 variation in output power respectively and a 25 W peak output power.

show abstract

Section: Design Methodologymentioning

confidence: 99%

Design of Single-Switch Inverters for Variable Resistance/Load Modulation Operation

Rosłaniec

Jurkov

Bastami

2015

IEEE Trans. Power Electron.

129

View full text Add to dashboard Cite

show abstract

“…Several works in the literature related to the Class-DE inverter have focused on the following areas: steady-state analysis with half-bridge switching network at a fixed and any duty ratio [1], [5], [9], [12] and design of inverter with with linear and nonlinear shunt MOSFET capacitances [2], [14], [16], [17]. However, a detailed steady-state analysis of a full-bridge Class-DE inverter at any duty cycle has not been reported.…”

Section: Introductionmentioning

confidence: 99%

Analysis and design of full-bridge Class-DE inverter at fixed duty cycle

Luca

Grasso

Jacopo

et al. 2016

IECON 2016 - 42nd Annual Conference of the IEEE Industrial Electronics Society

Self Cite

View full text Add to dashboard Cite

Abstract-This paper presents the following for a full-bridge Class-DE resonant inverter operating at a fixed duty ratio: (a) steady-state analysis using first-harmonic approximation and (b) derivation of closed-form expressions for the currents, voltages, and powers. The conversion from a series-parallel resonant network to a series resonant network is presented. Imposing the zero-voltage and zero-derivative switching conditions, the expression for a shunt capacitance across the MOSFETs in the inverter bridge is derived. The closed-form expressions to calculate the values of the resonant components are presented.A practical design of a Class-DE resonant inverter supplied by a dc input voltage of 230 V, delivering an output power of 920 W, and operating at a switching frequency of 100 kHz is considered and its design methodology is included. Theoretical results are validated by Saber simulations.

show abstract

“…The zerovoltage-switching (ZVS) and zero-derivative-switching (ZDS) conditions are satisfied, which ensure zero switching loss and improve component tolerances [8,9]. Furthermore, in order to design an accurate power amplifier circuit, it is necessary to consider adequately the frequency limitation of an active device.…”

Section: Introductionmentioning

confidence: 99%

Frequency limitation of an optimum performance class-E power amplifier

Ha‐Van

Dang-Duy

Kim

et al. 2016

IEICE Electron. Express

View full text Add to dashboard Cite

Class-E power amplifiers have found widespread application because of their design simplicity and high-efficiency operation. The nonlinear characteristic of the switching device significantly affects the power amplifier performance, although this is often neglected in theoretical analyses. In this paper, a class-E power amplifier with a shunt capacitance composed of nonlinear and linear capacitance has been mathematically analyzed to obtain the frequency limitation that governs maximum efficiency operation. The analytical method is presented to determine the effective operating frequency for any model of MOSFET device. The practical power amplifier circuit, using a MRF282 MOSFET, was implemented to verify the validity of the theoretical analysis.

show abstract

Design of Class-E Amplifier With MOSFET Linear Gate-to-Drain and Nonlinear Drain-to-Source Capacitances

Cited by 72 publications

References 25 publications

Design of Single-Switch Inverters for Variable Resistance/Load Modulation Operation

Design of Single-Switch Inverters for Variable Resistance/Load Modulation Operation

Analysis and design of full-bridge Class-DE inverter at fixed duty cycle

Frequency limitation of an optimum performance class-E power amplifier

Contact Info

Product

Resources

About