Design of Class F&lt;sup&gt;-1&lt;/sup&gt; Power Amplifier Using GaN pHEMT for Industrial Applications

Tanany, Ahmed Al; Sayed, Ahmed; Boeck, Georg

doi:10.1109/gemic.2009.4815893

Cited by 4 publications

(2 citation statements)

References 8 publications

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“…Among diverse passive RF devices, the power divider (PD) is indispensable component in power amplifiers [1], phased array antenna [2], mixers [3] and many other circuits. These circuits are widely used in communications and radar systems for decades.…”

Section: Introductionmentioning

confidence: 99%

Microstrip unequal Wilkinson power divider with 1:11 division ratio

Taher

Farrell

2015

Journal of Electromagnetic Waves and Applications

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In this paper, a 1:11 unequal microstrip Wilkinson power divider (WPD) is presented. Power division is a necessary function in most of the wireless/wireline communication systems. To design 1:11 WPD using an easy-to-fabricate microstrip technology, microstrip line having a very high characteristic impedance (Z c ) value of 315 Ω is needed. Realization of this value is impractical because too thin line is required. Defected ground structure (DGS) provides the hosting microstrip line with high inductance and modest capacitance values simultaneously. As a result, very high impedance could be implemented using practical lines. Novel analytical calculation method is developed to compute Z c of microstrip line loaded with DGS. It is found that circular-patterned DGS could be used to realize the required microstrip line. The designed WPD is fabricated and measured at centre frequency (f c ) equals 1 GHz. The measurements of insertion and reflection losses of the fabricated circuit as well as the isolation between the output ports are in a good agreement with the simulated responses of the designed circuit.

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Section: Introductionmentioning

confidence: 99%

Microstrip unequal Wilkinson power divider with 1:11 division ratio

Taher

Farrell

2015

Journal of Electromagnetic Waves and Applications

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“…A power amplifier (PA) with highpower, linearity,and efficiency is a key component in radar systems [1][2][3][4][5][6]. In the past, the power available from individual solid-state devices has been limited when compared with vacuum tube devices.…”

Section: Introductionmentioning

confidence: 99%

An X-Band 100 W Gan Hemt Power Amplifier Using a Hybrid Switching Method for Fast Pulse Switching

Kim¹,

Cho²,

Kwon³

et al. 2017

PIER B

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Abstract-This paper presents a new hybrid switching technique for enhanced pulsemode solid-state power amplifiers (SSPAs). In the proposed technique, pulse timing for bias stabilization is effectively decoupled from pulse amplification. The decoupling allows fast pulse switching by reducing the pulse width and increasing the pulse repetition frequency (PRF). The new switching method is applied to an X-band SSPA using GaN HEMT. The advantage of the proposed method is demonstrated by its excellent pulse characteristic. The proposed technique achieves a fast PRF of 100 kHz and a narrow pulse width of 1 µsec. The measured rise/fall time(RFT) is 12.5/11.1 nsec, which is more than four times less than that of previous works. In addition, an excellent pulse droop of 0.43 dB is achieved with an output power of 51.3 dBm at 9.9 GHz. The fabricated SSPA shows a maximum output power of 135 W, a small signal gain of 47 dB, and power added efficiency (PAE) of 28.2% at 9.9 GHz. These results show that the proposed pulse switching technique provides a promising solution for SSPAs using a high-power GaN HEMT.

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