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Abstract-Switch mode power amplifiers offer high efficiency approaching 100% for an ideal case. This paper discusses the operation mode of broadband switch mode class-E power amplifier designed previously by the authors for UHF applications (600-1000 MHz). A method to extract the waveforms at the die reference plane from the time domain analysis using 50 Ω environment systems is discussed. It has been observed that the designed class-E power amplifier operation was not maintained ideally over the entire band; however, it was operating close to the class-E operation.

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Switch mode power amplifiers offer high efficiency approaching 100% for an ideal case. This paper discusses the operation mode of broadband switch mode class-E power amplifier designed previously by the authors for UHF applications (600-1000 MHz). A method to extract the waveforms at the die reference plane from the time domain analysis using 50 Ω environment systems is discussed. It has been observed that the designed class-E power amplifier operation was not maintained ideally over the entire band; however, it was operating close to the class-E operation.

This work presents a Class F -1 power amplifier (PA) operating at 2.35 GHz. An output power of 40 W (46 dBm) was achieved with 10 dB gain. The maximum drain efficiency was measured to be 60.8 % (PAE = 55.7 %). The power amplifier was implemented using GaN pHEMT. The realization of the optimum load resonator was designed by a microstrip resonator, for the first four harmonics. The resonator achieves an optimum load for the transistor at the fundamental frequency.