Design of Different Digital Circuits Using Single Electron Devices

Talukdar, Banani; P.C, Pradhan; Agarwal, Amit

doi:10.5121/msej.2016.3102

Cited by 4 publications

(1 citation statement)

References 14 publications

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“…The single electron memory ought to operate with a low power and low error rate (13,14), scalability to the sub nanometer command and very high sensitivity, Several other uses of single-electron analog devices in different scientific and metrology instruments appear to be possible because the hope that silicon transistors will be replaced by single-electron devices in integrated circuits, is challenging and remains uncertain (15,16).…”

Section: Introductionmentioning

confidence: 99%

Transfer Characteristics Analysis of Single Electron Transistor

Mishra¹,

Gangwar²,

Kushwah³

et al. 2022

ECS Trans.

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Single Electron Transistor is often referred to as a nanometer scale because it can be made very small and can detect the movement of individual electrons. However, the SET has a high input impedance, low voltage gain, and is sensitive to random background charges. The Transfer characteristics features of a SET are calculated by analyzing the different resistance of the tunnels and the tunneling capacitance. Tunneling method is considering a stochastic process, and the state master equation is solving to calculate the free energy change. There are some unusual variations that set the limit for parallel circuit parameters for proper operation. The SET can maintain its scalability and control the movement of individual electrons. In this paper, we have provided a comparative and simulated study of standard CMOS device, SET and hybrid circuits such as a switched capacitor filter.

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Section: Introductionmentioning

confidence: 99%

Transfer Characteristics Analysis of Single Electron Transistor

Mishra¹,

Gangwar²,

Kushwah³

et al. 2022

ECS Trans.

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show abstract

Analytical computation of transfer characteristics of single electron transistor

Deyasi¹,

Chakraborty²

2017

2017 Devices for Integrated Circuit (DevIC)

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Measuring of an unknown voltage by using single electron transistor based voltmeter

Biswas¹

2021

SPQEO

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In engineering and science, high operating speed, low power consumption, and high integration density equipment are financially indispensable. Single electron device (SED) is one such equipment. SEDs are capable of controlling the transport of only one electron through the tunneling transistor. It is single electron that is sufficient to store information in SED. Power consumed in the single electron circuit is very low in comparison with CMOS circuits. The processing speed of single electron transistor (SET) based device will be nearly close to electronic speed. SET attracts the researchers, scientists or technologists to design and implement large scale circuits for the sake of the consumption of ultra-low power and its small size. All the incidences for the case of a SET-based circuit happen when only a single electron tunnels through the transistors under the proper applied bias voltage and a small gate voltage or multiple gate voltages. For implementing a single electron transistor based voltmeter circuit, SET would be the best candidate to fulfil the requirements of it. Ultra-low noise is generated during tunneling SEDs. A D Flip-Flop is implemented and based on this, two kinds of registers like sequence register and сode register are made.

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Design of Different Digital Circuits Using Single Electron Devices

Abstract: Single Electron transistor (SET) is foreseen as an excellently growing technology. The aim of this paper is

Cited by 4 publications

References 14 publications

Transfer Characteristics Analysis of Single Electron Transistor

Transfer Characteristics Analysis of Single Electron Transistor

Analytical computation of transfer characteristics of single electron transistor

Measuring of an unknown voltage by using single electron transistor based voltmeter

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